Correction to: A passive and objective measure of recognition memory in mild cognitive impairment using Fastball memory assessment. [PDF]
europepmc +1 more source
Temporal asymmetry of neural pattern similarity predicts recognition memory decisions. [PDF]
Ye Z +6 more
europepmc +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Hypoactivity of the prelimbic cortex projecting to the lateral entorhinal cortex contributes to neuropathic pain-induced object recognition memory impairment in mice. [PDF]
Han S +10 more
europepmc +1 more source
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
Conceptualisation of event roles in L1 and L2 by Japanese learners of english: the effect of perspectives of event construal on recognition memory. [PDF]
Qu J, Miwa K.
europepmc +1 more source
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
Repeated application of transcranial ultrasound maintains spatial and recognition memory in 5xFAD mice with reduction of amyloid-β burden. [PDF]
Yoo SS +3 more
europepmc +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Oral Supplementation with <i>Prunus domestica</i> L. Extract Restores Recognition Memory Impairment Caused by D-Galactose in Rats. [PDF]
Aranarochana A +10 more
europepmc +1 more source

