Results 131 to 140 of about 11,309 (257)
Written by Tony R. Kuphaldt, this chapter of All About Circuit's third volume on Semiconductors describes the physics behind diodes and rectifiers. The chapter is divided into fourteen sections on topics including diode ratings, voltage multipliers,
Kuphaldt, Tony R.
core
1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes
International audienceA comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25°C-300°C range while the Si-PiN is tested up to 200°C due to the Si ...
Vellvehi, Miquel +11 more
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Making Sweat Measurable: Induction, Sampling, and Refreshment in Wearable Biofluid Sensing
Wearable sweat sensing relies not only on chemical detection but also on controlled biofluid management. This Review integrates sweat physiology, induction strategies, and microfluidic sampling architectures, demonstrating how flux, transport, and refreshment shape measurement reliability.
Soyoung Shin, Wei Gao
wiley +1 more source
Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung +7 more
wiley +1 more source
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su +13 more
wiley +1 more source
Effects of 22 MeV protons on single junction and silicon controlled rectifiers [PDF]
The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rectifiers were investigated. The results show that low-leakage devices and silicon controlled rectifiers are the most susceptable to radiation damage. There
Beatty, M. E., III
core
In bladder cancer, LRG1 binds to ANXA2 to trigger mitochondrial ROS‐dependent NETosis. This pathogenic cascade actively uncouples endothelial‐mural cell interactions, driving profound vascular destabilization. Consequently, targeting the LRG1‐ANXA2 axis attenuates the neutrophil burden and induces structural vascular normalization, offering a powerful ...
Dongshan Chen +8 more
wiley +1 more source
Maximizing Nanoscale Disorder in Block Copolymers for Orientation‐Independent SERS Platform toward Non‐Invasive Diagnostics is a nature‐inspired strategy that engineers controlled randomness within block copolymer lamellae to achieve optical isotropy without compromising nanoscale periodicity.
Jin Man Kim +6 more
wiley +1 more source
Infrared metasurface‐guided waves (IR‐MGW) scattered by a time interface (TI) induced by rapid, localized free‐carrier generation can be efficiently rectified to generate strong, persistent magnetic fields. We develop a rigorous, theoretical model to study a time‐varying, dispersive medium and uncover the redistribution of the initial energy of the IR ...
Shivaksh Rawat +2 more
wiley +1 more source
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee +5 more
wiley +1 more source

