Results 51 to 60 of about 3,320 (263)

Comprehensive Overview and Mitigation Strategies of Nonlinear Transistor Behavior in CMOS Ambient RF Energy Harvesting Systems

open access: yesIEEE Access
This article presents a comprehensive overview of nonlinear CMOS transistor circuits, their uses, effects, and techniques in ambient RF energy harvesting (RFEH) systems.
Jamie How Peng Yong   +5 more
doaj   +1 more source

A Roll‐to‐Roll Gravure‐Printing System for Manufacturing Near‐Field Energy‐Harvesting Labels

open access: yesAdvanced Intelligent Systems, 2023
Billions of costless near‐field communication (NFC) sensor labels per day are demanded to practically enable edge computing between smartphones and everyday objects.
Sagar Shrestha   +4 more
doaj   +1 more source

Gate‐Tunable Floquet Weyl Photon Emission from Topological Dirac Semimetal Cd3As2

open access: yesAdvanced Materials, EarlyView.
We report experimental demonstration of Floquet band engineering in a 3D Dirac semimetal. Circularly polarized light breaks the time reversal symmetry and transforms Cd3As2 into a Floquet–Weyl phase, splitting Dirac nodes into chirality‐opposite Weyl nodes with nonzero Berry curvature.
Sobhan Subhra Mishra   +4 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

A 99%-efficiency GaN converter for 6.78 MHz magnetic resonant wireless power transfer system

open access: yesThe Journal of Engineering, 2014
The authors developed a high-efficiency gallium-nitride (GaN) Class-E converter for a 6.78 MHz magnetic resonant wireless power transfer system. A negative-bias gate driver circuit made it possible to use a depletion mode GaN high-electron-mobility ...
Yoshiyuki Akuzawa   +3 more
doaj   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Oxide TFT Rectifiers on Flexible Substrates Operating at NFC Frequency Range

open access: yesIEEE Journal of the Electron Devices Society, 2019
This paper presents the experimental characterization of different rectifier circuits using indium-gallium-zinc-oxide thin-film transistor technologies either at NFC or a high frequency range (13.56 MHz) of RFID.
Bhawna Tiwari   +8 more
doaj   +1 more source

Rational Tuning of Hygroscopic Oscillation of Stacked Nanoflake Assemblies for Continuous Ambient Energy Harvesting

open access: yesAdvanced Materials, EarlyView.
Stacked nanoflake assembly (SNA) membranes can oscillate autonomously, offering opportunities for soft actuation and energy harvesting. This work uncovers the physical mechanism behind the sustained oscillation of SNA membranes in gradient humidity and identifies three governing dimensionless parameters, enabling rational design for optimizing SNA ...
Zijing Zhang   +5 more
wiley   +1 more source

Ligand‐Mediated Shape Engineering of SWIR InAs Colloidal Quantum Dots for Photodetector Applications

open access: yesAdvanced Materials, EarlyView.
The table of contents: A robust ligand‐engineering strategy is introduced for SWIR InAs CQDs synthesized from amino‐arsine precursors. Bulky OA ligands induce controlled shape evolution, allowing access to >1700 nm absorption under mild conditions. Halide‐based inkification enables photodetectors with 19.1% EQE at 1300 nm and detectivity exceeding 1010
Taewan Kim   +5 more
wiley   +1 more source

Optoelectronic Nanofluidic Neural Networks for Ionic Computing

open access: yesAdvanced Materials, EarlyView.
An ion‐based optoelectronic nanofluidic memristor enables neuromorphic computing in aqueous environments. With tunable ionic memory and multimodal synaptic plasticity, it realizes densely connected ionic neural networks capable of image classification, motion prediction, logic computation, and real‐time in‐sensor computing, advancing fully connected ...
Yaxin Huang   +10 more
wiley   +1 more source

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