Results 71 to 80 of about 11,309 (257)

Power and high temperature Schottky rectifiers

open access: yes, 1997
This thesis focuses on Schottky rectifier device physics and their application to the development of power and high temperature Schottky rectifiers. The topics covered are divided into three main areas; materials for high temperature Schottky rectifiers,
Schoen, Kipp Jay
core   +1 more source

Investigation on the AC/DC Interactions in Voltage-Source Rectifiers and Current-Source Rectifiers

open access: yes, 2018
This paper investigates the interactions between the ac side and the dc-link in voltage-source rectifiers (VSRs) and current-source rectifiers (CSRs). The impedance in the ac side and dc-link is proved to be the critical role in the ac/dc interactions ...
Wang, Xiongfei; id_orcid   +5 more
core   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

A New Class of Low-Cost Three-Phase

open access: yes, 2008
— Several new schemes for constructing Q0 lowharmonic rectifiers are introduced here. These Q0 ac–dc topologies are derived from parent dc–dc converter topologies.
Zero-voltage Switching   +1 more
core  

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

Universal precision rectifiers with current active elements

open access: yes, 2013
In this thesis new circuit solutions of universal precision rectifiers with current active elements are proposed. Based on the knowledge of current active elements, universal precision rectifiers and adverse impacts on these circuits new circuit ...
Ryšavý, Lukáš
core   +2 more sources

GaN-based single-phase bridgeless PFC boost rectifier

open access: yesThe Journal of Engineering, 2019
A single-phase GaN-based bridgeless PFC Boost converter design is proposed regarding multi-domain optimisation concepts. A design guideline describing elements losses are presented concerning the selected power converter topology.
Tiago Kommers Jappe   +2 more
doaj   +1 more source

A Very-High Frequency Solution-Processed Organic Field-Effect Transistor With Improved Voltage-Normalized Frequency of Transition. [PDF]

open access: yesAdv Sci (Weinh)
Increasing the frequency at which organic electronics operate while limiting the operation voltage is key to enabling future sustainable wireless applications. This work shows p‐type organic field‐effect transistors based on a molecularly doped, small molecule/polymer blend (C8‐BTBT:C16IDT‐BT), fabricated via direct‐writing and solution‐processing ...
Losi T   +8 more
europepmc   +2 more sources

Modeling of a Breakdown Voltage in GaN Rectifiers and SiC Rectifiers

open access: yes, 2001
The breakdown voltage of wurtzite and zinc-blende GaN rectifiers as function of a doping concentration and the width of epitaxial layer were successfully modeled in the reach-through case.
You-Sang Lee, Min-Koo Han, Yearn-Ik Choi
core   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

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