Chiral Porphyrin Assemblies Investigated by a Modified Reflectance Anisotropy Spectroscopy Spectrometer [PDF]
Molecules, 2023 Reflectance anisotropy spectroscopy (RAS) has been largely used to investigate organic compounds: Langmuir–Blodgett and Langmuir–Schaeffer layers, the organic molecular beam epitaxy growth in situ and in real time, thin and ultrathin organic films ...
Ilaria Tomei +10 more
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Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS) [PDF]
Micromachines, 2021 Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the
Guilherme Sombrio +5 more
doaj +4 more sources
Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment [PDF]
Beilstein Journal of Nanotechnology, 2016 Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better
Ann-Kathrin Kleinschmidt +7 more
doaj +4 more sources
Reflectance anisotropy spectroscopy of magnetite (110) surfaces [PDF]
Physical Review B, 2014 Reflectance anisotropy spectroscopy (RAS) has been used to measure the optical anisotropies of bulk and thin-film Fe3O4(110) surfaces. The spectra indicate that small shifts in energy of the optical transitions, associated with anisotropic strain or ...
Byrne, C. +8 more
core +9 more sources
Review: An Optical Surface Probe by Reflectance Anisotropy Spectroscopy
Hittite Journal of Science and Engineering, 2019 Rface and interface information. RAS measures the difference in reflectance of light eflectance anisotropy spectroscopy RAS is an optical technique to produce surlinearly polarised along two orthogonal axes in the surface at near normal incidence as ...
Orhan Zeybek
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In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy [PDF]
NanomaterialsThe surface symmetry of the substrate plays an important role in the epitaxial high-quality growth of 2D materials; however, in-depth and in situ studies on these materials during growth are still limited due to the lack of effective in situ monitoring ...
Yufeng Huang +6 more
doaj +3 more sources
Porphycene Films Grown on Highly Oriented Pyrolytic Graphite: Unveiling Structure–Property Relationship through Combined Reflectance Anisotropy Spectroscopy and Atomic Force Microscopy Investigations [PDF]
Proceedings, 2021 Thin organic films are widely used in sensors, solar cells, and optical devices due to their intense absorption in the visible/near-infrared (IR) region.
Marta Penconi +7 more
doaj +2 more sources
Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA) [PDF]
Advances in Materials Science and Engineering, 2022 Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many lithographic processes in semiconductor technology. Typically, surface roughness is undesired, but more and more applications arise where rough surfaces are used ...
Emerson Oliveira +3 more
doaj +2 more sources
In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors [PDF]
Advances in Materials Science and Engineering, 2023 Reflectance anisotropy/difference spectroscopy (RAS/RDS) had been developed for monitoring epitaxial semiconductor growth, especially for the metal-organic chemical vapor deposition (MOCVD) of III/V semiconductors.
Henning Fouckhardt +3 more
doaj +2 more sources
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys [PDF]
Applied Physics Letters, 2022 In this paper, we present results obtained by an optical technique, namely, reflectance anisotropy spectroscopy (RAS), applied to a series of GaAs1−xBix samples grown by molecular beam epitaxy (MBE) under different strain conditions with the increasing concentration of Bi, up to the higher value of about 7%.
C. Goletti +5 more
openalex +6 more sources