Results 51 to 60 of about 377 (127)
Ge/GaAs(001) interface formation investigated by reflectance anisotropy spectroscopy
The formation of the Ge/GaAs(001) interface has been investigated following the transformation of an As-dimer terminated GaAs(001)(2 X 4) surface into a Ge-Ga-dimer terminated (1 X 2) reconstruction and the subsequent deposition up to 10 ML of Ge.
Emiliani, V. +10 more
core +1 more source
The method of reflectance anisotropy spectroscopy (RAS) has proved extremely useful in monitoring the structure of semiconductor surfaces during growth under metal-organic vapour phase epitaxy conditions.
Morris, S. J. +5 more
core +1 more source
Reflectance anisotropy spectroscopy (RAS) is a non-distractive optical probe of surfaces that is capable of operation within a wide range of environments.
Gashaw, Fekadu
core
We present reflectance-anisotropy spectroscopy data for the adsorption of 3-thiophene carboxylic acid on the clean and O(2 x 1)/Cu(110) surfaces, which demonstrates the sensitivity to orientation parallel and perpendicular to the surface.
Cole, RJ +10 more
core
Ab initio study of reflectance anisotropy spectra of a submonolayer oxidized Si(100) surface
The effects of oxygen adsorption on the reflectance anisotropy spectrum (RAS) of reconstructed Si(100):O surfaces at submonolayer coverage (first stages of oxidation) have been studied by an ab initio density-functional theory local-density approximation
R. Del Sole +7 more
core +1 more source
Optical Properties of Capped Metallic Nanostructures, Grown on Silicon
Reflectance anisotropy spectroscopy (RAS) is a linear optical technique that measures the difference in the reflectance of two orthogonal polarisations at normal incidence.
McAlinden, Niall, McGilp, John
core
Reflectance anisotropy spectroscopy and the growth of low-dimensional materials
Reflectance anisotropy spectroscopy (RAS) has proved itself to be extremely sensitive to both surface reconstruction and ultrathin coverages of material on semiconductor surfaces.
D.I Westwood +3 more
core +1 more source
Understanding Growth-Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy
Reflectance anisotropy spectroscopy (RAS) has been recently applied to molecular beam epitaxy (MBE) of GaAsBi alloys. The presence of the voluminous Bi atoms induces strain in the crystal lattice, modifying the substrate symmetry of the centrosymmetric ...
Beatrice Bonanni +4 more
core +1 more source
We report on the results of a combined experimental study of the optical anisotropy of GaAs(001)-c(4x4) surfaces grown by molecular beam epitaxy and examined in situ by reflectance anisotropy spectroscopy (RAS) and high resolution electron energy loss ...
Goletti C. +15 more
core +1 more source
Polarized infrared reflection measurements in an ellipsometric set up and reflectance anisotropy spectroscopy RAS were used for the first time for combined in situ characterization of the electrochemical growth potentiostatic pulse method of thin ...
Hinrichs, K. +5 more
core +1 more source

