Results 61 to 70 of about 377 (127)

Reflectance anisotropy spectroscopy applied to organic thin films: The role of the substrate

, 2018
When light is reflected by a solid sample, the collected signal includes the optical response of all the matter within the light penetration depth. Studying films thinner than this length, the substrate thus contributes to the reflected beam, and affects
Sassella, A., Goletti, C, Raimondo, L., Trabattoni, S, Trabattoni, S., Bonanni, B, Bonanni, B., Fazi, L, Bussetti, G., Raimondo, L, Fazi, L., Bussetti, G, Goletti, C., Sassella, A, FAZI, LAURA   +14 more
core   +1 more source

Publication Only

HemaSphere, Volume 10, Issue S1, June 2026.
wiley   +1 more source

Porphyrin-Based Compounds: Synthesis and Application. [PDF]

Molecules, 2023
Monteiro CJP, Faustino MAF, Serpa C.
europepmc   +1 more source

Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy

, 1996
Reflectance anisotropy spectroscopy (RAS) in combination with reflection high‐energy electron diffraction (RHEED) was used to study in situ the initial steps of molecular beam epitaxial growth of InAs on GaAs(001).
D. I. Westwood, Zettler, J. T., E. Steimetz, Woolf, D. A., D. A. Woolf, Steimetz, E., Richter, W., W. Richter, Westwood, David I., Sobiesierski, Zbigniew, Z. Sobiesierski, J.-T. Zettler   +11 more
core   +1 more source

On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films

, 1998
Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates. It is shown by time resolved measurements that entirely different responses are measured at different photon
Steimetz, E., Richter, W., Westwood, David I., Sobiesierski, Zbigniew, Zettler, T.   +4 more
core   +1 more source

Real Time Control of III-V Semiconductor Surfaces During Movpe Growth by Reflectance Anisotropy Spectroscopy

, 1993
Reflectance anisotropy spectroscopy (RAS) is presented as real time analytical tool for metalorganic vapourphase epitaxy (MOVPE) of III-V-semiconductors. This optical method derives its surface sensitivity from the anisotropy of surface structures. It is
K. Ploska, J. Rumberg, W. Richter, M. Zorn, F. Reinhardt, J. JÖnsson   +5 more
core   +1 more source

Ge growth on GaAs(001) surfaces studied by reflectance anisotropy spectroscopy

, 2002
Surface modifications induced by germanium deposition onto clean GaAs(001) substrates have been monitored by reflectance anisotropy spectroscopy (RAS) and low energy electron diffraction (LEED).
Emiliani, V., Goletti, C, Richter, W, RICHTER, WOLFGANG, Esser, N, Fimland, BO, Emiliani, V, Esser, N., GOLETTI, CLAUDIO, Frisch, AM   +9 more
core   +1 more source

An In Situ Study of Precursor Decomposition via Refractive Index Sensing in p-Type Transparent Copper Chromium Oxide. [PDF]

Chem Mater, 2022
Zhussupbekova A, Zhussupbekov K, Verre R, Caffrey D, Shiel K, Shvets IV, Fleischer K.   +6 more
europepmc   +1 more source

Exploring RF Magnetron Sputtering Growth Composite Thin Film BiFeO₃-Bi₂Fe₄O₉ on C-Plane Al₂O₃ Substrate. [PDF]

Materials (Basel), 2023
Kallaev S, Sadykov S, Pavlenko A, Ataev M, Majzner J, Orudzhev F, Giraev K, Alikhanov N.   +7 more
europepmc   +1 more source

Change in the Electronic Structure of the Cobalt(II) Ion in a One-Dimensional Polymer with Flexible Linkers Induced by a Structural Phase Transition. [PDF]

Int J Mol Sci, 2022
Yambulatov DS, Voronina JK, Goloveshkin AS, Svetogorov RD, Veber SL, Efimov NN, Matyukhina AK, Nikolaevskii SA, Eremenko IL, Kiskin MA.   +9 more
europepmc   +1 more source