Results 61 to 70 of about 1,741,812 (125)

Estimating the irradiance spectrum from measurements in a limited number of spectral bands

, 2006
Accurate measurement and characterisation of fluctuations in the irradiance environment is important for many areas of optical remote sensing. This paper describes a method of estimating spectral irradiance over the region 400 – 1000 nm from the radiance
Milton, E.J., Rollin, E.M.
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Porphyrin-Based Compounds: Synthesis and Application. [PDF]

Molecules, 2023
Monteiro CJP, Faustino MAF, Serpa C.
europepmc   +1 more source

Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy

, 2006
In-plane optical anisotropy (IPOA) in (001) GaAs/AlGaAs superlattice induced by uniaxial strain has been investigated by reflectance difference spectroscopy (RDS).
Tang CG, Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn, Zhang WF, Chen YH, Wang ZG, Ye XL   +5 more
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Exploring RF Magnetron Sputtering Growth Composite Thin Film BiFeO₃-Bi₂Fe₄O₉ on C-Plane Al₂O₃ Substrate. [PDF]

Materials (Basel), 2023
Kallaev S, Sadykov S, Pavlenko A, Ataev M, Majzner J, Orudzhev F, Giraev K, Alikhanov N.   +7 more
europepmc   +1 more source

Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy

, 2005
The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly ...
Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn, Zeng YP, Xu B, Chen YH, Wang ZG, Ye XL   +5 more
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Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

, 2006
Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C.
Shi WH, Wang HN, Zhao, L, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail: leizhao@semi.ac.cn, Zhao L, Wang QM, Chen YH, Zuo YH   +6 more
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An In Situ Study of Precursor Decomposition via Refractive Index Sensing in p-Type Transparent Copper Chromium Oxide. [PDF]

Chem Mater, 2022
Zhussupbekova A, Zhussupbekov K, Verre R, Caffrey D, Shiel K, Shvets IV, Fleischer K.   +6 more
europepmc   +1 more source

Change in the Electronic Structure of the Cobalt(II) Ion in a One-Dimensional Polymer with Flexible Linkers Induced by a Structural Phase Transition. [PDF]

Int J Mol Sci, 2022
Yambulatov DS, Voronina JK, Goloveshkin AS, Svetogorov RD, Veber SL, Efimov NN, Matyukhina AK, Nikolaevskii SA, Eremenko IL, Kiskin MA.   +9 more
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Spectroscopic Analysis of Rare-Earth Silicide Structures on the Si(111) Surface. [PDF]

Materials (Basel), 2021
Sanna S, Plaickner J, Holtgrewe K, Wettig VM, Speiser E, Chandola S, Esser N.   +6 more
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Perfluoroalkyl Chain Length Effect on Crystal Packing and [LnO₈] Coordination Geometry in Lanthanide-Lithium β-Diketonates: Luminescence and Single-Ion Magnet Behavior. [PDF]

Int J Mol Sci, 2023
Smirnova KA, Edilova YO, Kiskin MA, Bogomyakov AS, Kudyakova YS, Valova MS, Romanenko GV, Slepukhin PA, Saloutin VI, Bazhin DN.   +9 more
europepmc   +1 more source