Results 21 to 30 of about 911 (236)

RSOA Intensity Modulator Frequency Chirp-Enhanced Optical OFDM PON Performance

open access: yesIEEE Photonics Journal, 2015
A reflective semiconductor optical amplifier intensity modulator (RSOA-IM) frequency chirp considerably increases the system frequency response of an intensity-modulation and direct-detection (IMDD) PON system over the passband signal spectral region ...
B. Y. Cao   +5 more
doaj   +1 more source

Theoretical Analysis of Directly Modulated Reflective Semiconductor Optical Amplifier Performance Enhancement by Microring Resonator-Based Notch Filtering

open access: yesApplied Sciences, 2018
We demonstrate the feasibility of using a single microring resonator (MRR) as optical notch filter for enabling the direct modulation of a reflective semiconductor optical amplifier (RSOA) at more than tripled data rate than possible with the RSOA alone.
Zoe V. Rizou, Kyriakos E. Zoiros
doaj   +1 more source

Hybrid integrated external cavity laser with a 172-nm tuning range

open access: yesAPL Photonics, 2022
Chip-scale lasers with a wide tunable range and a narrow linewidth have rich applications in optical communications, sensing, and light detection and ranging systems.
Yuyao Guo   +6 more
doaj   +1 more source

Off-set Filtering Effect in SOA Based Optical Access Network [PDF]

open access: yesRadioengineering, 2016
In-line and reflective semiconductor optical amplifiers (SOA and RSOA) can be effectively utilized as external optical intensity modulators. However the limited modulation bandwidth affects the application possibilities, because next generation access ...
E. Udvary
doaj  

NbN Broadband Plasmonic Absorbers for Efficient Hot-Carrier Injection Toward Improved Solar-to-Hydrogen Conversion. [PDF]

open access: yesAdv Sci (Weinh)
Niobium nitride (NbN) broadband plasmonic metasurface absorbers provide an efficient platform for solar‐energy conversion through hot‐carrier injection. Quasi‐epitaxial NbN features a low work function of 4.0 eV, reducing the interfacial injection barrier and facilitating charge transfer into adjacent photocatalysts.
Peng TY   +11 more
europepmc   +2 more sources

Bit- and Power-Loading—A Comparative Study on Maximizing the Capacity of RSOA Based Colorless DMT Transmitters

open access: yesApplied Sciences, 2017
We present a comparative study of the capacity increase brought by bit- and power-loading discrete multi-tone (DMT) modulation for low-cost colorless transmitters.
Simon Arega Gebrewold   +4 more
doaj   +1 more source

Centralized-Light-Source Two-Way PAM8/PAM4 FSO Communications With Parallel Optical Injection Locking Operation

open access: yesIEEE Access, 2019
For the first time up to our knowledge, a centralized-light-source two-way eight-level pulse amplitude modulation (PAM8)/four-level pulse amplitude modulation (PAM4) free-space optical (FSO) communication with parallel optical injection-locked vertical ...
Wen-Shing Tsai   +4 more
doaj   +1 more source

All optical Reflective Semiconductor Optical Amplifier based half adder

open access: yes, 2020
Postgraduate Department of Physics, B. B. College Asansol, Asansol-713 303, West Bengal, India Department of Physics, National Institute of Technology Durgapur, Durgapur-713 209, West Bengal, India E-mail: klmukherjee003@gmail.com Manuscript received online 04 December 2020, accepted 24 December 2020 All optical Reflective Semiconductor Optical ...
Maji, Kajal   +2 more
openaire   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Optically Integrated InP–Si$_3$ N$_4$ Hybrid Laser

open access: yesIEEE Photonics Journal, 2016
We describe the first demonstration and characterization of an optically integrated InP–Si $_3$N$_4$ hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a Si$_3$N $_4$ based feedback ...
Youwen Fan   +8 more
doaj   +1 more source

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