All optical Reflective Semiconductor Optical Amplifier based half adder
, 2020 Postgraduate Department of Physics, B. B. College Asansol, Asansol-713 303, West Bengal, India Department of Physics, National Institute of Technology Durgapur, Durgapur-713 209, West Bengal, India E-mail: klmukherjee003@gmail.com Manuscript received online 04 December 2020, accepted 24 December 2020 All optical Reflective Semiconductor Optical ...
Maji, Kajal +2 more
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IEEE Photonics Journal, 2015 In this investigation, we propose and demonstrate a stable and wavelength-tunable self-injected reflective semiconductor optical amplifier (RSOA)-based laser by using the Faraday rotator mirror (FRM) and the fiber mirror (FM) serving as a reflected ...
Yu-Fu Wu +4 more
doaj +1 more source
25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers [PDF]
, 2015 This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 213501 (2015) and may be found at https://doi.org/10.1063/1.4921785.Error-free
Bimberg, Dieter +6 more
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MDM-TDM PON Utilizing Self-Coherent Detection-Based OLT and RSOA-Based ONU for High Power Budget
IEEE Photonics Journal, 2016 A cost-effective mode-division-multiplexing and time-division-multiplexing passive optical network (MDM-TDM PON) utilizing a self-coherent detection for upstream signal at optical line terminal (OLT) and a high-gain reflective semiconductor optical ...
Yuanxiang Chen +11 more
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RSOA Intensity Modulator Frequency Chirp-Enhanced Optical OFDM PON Performance
IEEE Photonics Journal, 2015 A reflective semiconductor optical amplifier intensity modulator (RSOA-IM) frequency chirp considerably increases the system frequency response of an intensity-modulation and direct-detection (IMDD) PON system over the passband signal spectral region ...
B. Y. Cao +5 more
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Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology [PDF]
, 2003 The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne Johan +2 more
core +3 more sources
Hybrid integrated external cavity laser with a 172-nm tuning range
APL Photonics, 2022 Chip-scale lasers with a wide tunable range and a narrow linewidth have rich applications in optical communications, sensing, and light detection and ranging systems.
Yuyao Guo +6 more
doaj +1 more source
Power and wavelength polarization bistability with very wide hysteresis cycles in a 1550nm-VCSEL subject to orthogonal optical injection [PDF]
, 2009 We have measured optical power and wavelength polarization bistability in a 1550nm-Vertical Cavity Surface-Emitting Laser (VCSEL) subject to orthogonally-polarized optical injection into the orthogonal polarization of the fundamental transverse mode ...
Ana Quirce +26 more
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Noise in Passively Mode-Locked Lasers [PDF]
, 1998 For the first time, phase fluctuations in the spectral intensity of the pulse train generated by passively mode-locked semiconductor lasers have been measured. The results reveal diffusion-like fluctuations of this phase.
Eliyahu, D., Yariv, A.
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Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications [PDF]
, 2004 The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne-Johan +2 more
core +2 more sources