Results 111 to 120 of about 18,880 (284)

Electric field–temperature phase diagram of sodium bismuth titanate-based relaxor ferroelectrics

, 2018
The electric field–temperature phase diagrams of three bismuth sodium titanatebased relaxor ferroelectrics are reported, namely 0.94(Na1/2Bi1/2TiO3)–0.06(BaTiO3), 0.80(Na1/2Bi1/2TiO3)–0.20(K1/2Bi1/2TiO3) and 0.75(Na1/2Bi1/2TiO3)–0.25(SrTiO3).
Yoshitaka Ehara, Ehara, Yoshitaka, Nikola Novak, Acosta, Matias, Vögler, Malte, Malte Vögler, Rödel, Jürgen, Novak, Nikola, Jürgen Rödel, Florian Weyland, Weyland, Florian, Matias Acosta   +11 more
core   +1 more source

Symmetry‐Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two‐Dimensional Limit

Advanced Science, EarlyView.
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui, Ziye Zhu, Xunkai Duan, Bowen Hao, Xianzhang Chen, Jiayong Zhang, Tong Zhou   +6 more
wiley   +1 more source

Enhancement of Energy Storage Performance by Criticality in Lead-Free Relaxor Ferroelectrics

, 2018
In modern electronic systems and energy conversion, efficient capacitors with large energy densities are needed. Relaxor ferroelectrics show the potential to achieve those requirements.
Nikola Novak, Haibo Zhang, Novak, Nikola, Florian Weyland, Weyland, Florian, Zhang, Haibo   +5 more
core   +1 more source

Superatom Distortion Induces Triferroicity and Spin Splitting in Two‐Dimensional Antiferromagnets

Advanced Science, EarlyView.
The incorporation of superatoms into a 2D square lattice induces symmetry breaking, thereby enabling concurrent coupling among magnetism, ferroelectricity, and ferroelasticity. This strategy achieves triferroic behavior—characterized by spin‐split antiferromagnetic ground states—and offers a viable pathway toward energy‐efficient spintronic devices ...
Zhen Gao, Fengxian Ma, Guoping Gao, Weizhen Meng, Ying Liu, Yandong Ma, Yalong Jiao   +6 more
wiley   +1 more source

PVDF-based dielectric polymers and their applications in electronic materials

IET Nanodielectrics, 2018
The attractive dielectric poly(vinylidene fluoride) (PVDF) and its copolymers are well confirmed possessing the highest electroactive response including dielectric constant, piezoelectric and ferroelectric effects, which have increasingly wide range of ...
Weimin Xia, Zhicheng Zhang
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Dipolar Nematic State in Relaxor Ferroelectrics

Physical Review X
Relaxor ferroelectrics exhibit exceptional dielectric and electromechanical properties, yet their microscopic origins remain elusive due to the interplay of hierarchical polar structures and chemical complexity. While models based on polar nanoregions or
Yuan-Jinsheng Liu, Tyler C. Sterling, Shi Liu   +2 more
doaj   +1 more source

High-entropy designed filled tungsten bronze structure ferroelectrics with high Curie temperature and enhanced piezoelectricity

Journal of Materiomics
High-entropy design has emerged as a powerful strategy to induce configurational disorder and relaxor behaviour in ferroelectrics; however, its effectiveness in crystallographically constrained systems remains unclear.
Bowen Wang, Vladimir Koval, Mirva Eriksson, Michael J. Reece, Jiangtao Zeng, Haixue Yan   +5 more
doaj   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

Improved BaBi4Ti4O15 Relaxor Ferroelectrics for FRAM Application [PDF]

, 2010
Bi-based Aurivillius family of compounds have received considerable attention as the materials for ferroelectric random access memory (FRAM) because of their low operating voltage, fast switching speed, large remnant polarization, low coercive field ...
Subudhi, R S
core