Results 121 to 130 of about 2,097 (293)

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Emergence of high piezoelectricity from competing local polar order-disorder in relaxor ferroelectrics. [PDF]

Nat Commun, 2023
Liu H, Shi X, Yao Y, Luo H, Li Q, Huang H, Qi H, Zhang Y, Ren Y, Kelly SD, Roleder K, Neuefeind JC, Chen LQ, Xing X, Chen J.   +14 more
europepmc   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Enhanced electrocaloric effect in lead-free relaxor ferroelectrics via point defect engineering [PDF]

The electrocaloric effect enables solid-state refrigeration technology with high energy efficiency and zero global warming potential. Normal displacive ferroelectric materials exhibit the highest electrocaloric effect just above their Curie point.
Yan, H., Yan, H, Wu, Z, Banerjee, K, Zhang, M, Hu, W., Hu, W, Zhang, M., Wu, Z., Banerjee, K.   +9 more
core   +1 more source

Zero Thermal Expansion and Local Structure in KxMnxFe2‐xMo3O12‐Based Materials

Advanced Science, EarlyView.
Local structure engineering via ion insertion drives local structural transformation from low‐symmetry P21/a to high‐symmetry R‐3c, enhancing structural flexibility and realizing a transition from positive thermal expansion to wide‐temperature‐range zero thermal expansion in KxMnxFe2‐xMo3O12‐based materials.
Gongsen He, Yongqiang Qiao, Shibo Zhao, Xin Chen, Xiangkai Hao, Kaiyue Zhao, Xinglai Yuan, Mengru Li, Wen Yin, Shintaro Kobayashi, Shogo Kawaguchi, Bingbing Fan, Rui Zhang, Qilong Gao   +13 more
wiley   +1 more source

Author Correction: Deciphering the atomic-scale structural origin for large dynamic electromechanical response in lead-free Bi_0.5Na_0.5TiO₃-based relaxor ferroelectrics. [PDF]

Nat Commun, 2023
Yin J, Shi X, Tao H, Tan Z, Lv X, Ding X, Sun J, Zhang Y, Zhang X, Yao K, Zhu J, Huang H, Wu H, Zhang S, Wu J.   +14 more
europepmc   +1 more source

Flexible Unusual Ternary‐Component Graded‐Modulus Dielectric Films with High‐Density Capacitive Energy Storage

Advanced Science, EarlyView.
Hierarchical PP–LSR107–BaTiO3 nanocomposite films are fabricated by one‐step extrusion and stretching for roll‐to‐roll manufacture, combining high energy storage and processing flexibility. LSR107 surrounds BaTiO3‐rich regions, locating amorphous PP, decreasing defects, and introducing deep traps that homogenize the electric field and suppress charge ...
Yi Gao, Xin‐Jie Wang, Lei Huang, Kun Xing, Baoquan Wan, Yan‐Hui Song, Jian‐Tao Wang, Li‐Juan Yin, Tong Liang, Yan Meng, Zunpeng Feng, Kai Huang, Ke Bi, Shao‐Long Zhong, Zhi‐Min Dang   +14 more
wiley   +1 more source

Poling-free relaxor-PbTiO3 single crystals

Journal of Materiomics
Relaxor-PbTiO3 ferroelectric single crystals have drawn attention aiming at high-end piezoelectric applications thanks to their excellent piezoelectric properties.
Hwang-Pill Kim, Geon-Ju Lee, Ju-Hyeon Lee, Jae-Hyeon Cho, Hye-Lim Yu, Woo-Seok Kang, Joo-Hee Kang, Ho-Yong Lee, Wook Jo   +8 more
doaj   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

Advanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee, Seungjun Lee, Tae‐Hyeon Kim, Yonghee Jeong, Gwangmin An, Minsu Ko, Junsu Yu, Heung Soo Kim, Yang Chai, Sungjun Kim   +9 more
wiley   +1 more source