Results 141 to 150 of about 18,880 (284)

Influence of dipole defects on polarization switching in the vicinity of a crack in relaxor ferroelectrics

, 2010
Simulations of the polarization switching process near the tip of an edge crack in relaxor ferroelectrics subjected to external electric field have been carried out by employing the time-dependent Ginzburg-Landau theory and the phase-field method.
Soh, A.K., Liu, JX, Li, L, Zhao, XF, Soh, AK, Liu, J.X., Zhao, X.F., Li, L., X.F. Zhao, A.K. Soh, J.X. Liu, L. Li   +11 more
core   +1 more source

Li+ and Nb5+ codoped BNT-based ceramic with ultrahigh electrostrain under a moderate electric field

Journal of Advanced Ceramics
Lead-free piezoceramics have been an important research topic over the past two decades, aiming to replace Pb-based piezoceramics for sensor and actuator applications.
Zhengxiu Ma, Weiye Nie, Mingze Sun, Peng Li, Lidan Liu, Baoming Wang, Wenwu Cao   +6 more
doaj   +1 more source

Author Correction: Deciphering the atomic-scale structural origin for large dynamic electromechanical response in lead-free Bi_0.5Na_0.5TiO₃-based relaxor ferroelectrics. [PDF]

Nat Commun, 2022
Yin J, Shi X, Tao H, Tan Z, Lv X, Ding X, Sun J, Zhang Y, Zhang X, Yao K, Zhu J, Huang H, Wu H, Zhang S, Wu J.   +14 more
europepmc   +1 more source

Poling-free relaxor-PbTiO3 single crystals

Journal of Materiomics
Relaxor-PbTiO3 ferroelectric single crystals have drawn attention aiming at high-end piezoelectric applications thanks to their excellent piezoelectric properties.
Hwang-Pill Kim, Geon-Ju Lee, Ju-Hyeon Lee, Jae-Hyeon Cho, Hye-Lim Yu, Woo-Seok Kang, Joo-Hee Kang, Ho-Yong Lee, Wook Jo   +8 more
doaj   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing

Advanced Science, EarlyView.
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh, Ji Eun Kim, Suk Yeop Chun, Su In Hwang, Byung Seok Kim, Young Jae Lee, Ho Won Jang, Jung Ho Yoon   +7 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

Advanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim, Shinhyeong Lee, Hyojun Choi, Minseung Park, Hyunah Cho, Min Hyuk Park, Yunseok Kim   +6 more
wiley   +1 more source

A phase-field model on relaxor ferroelectrics based on random field theory

, 2016
Relaxor ferroelectrics are a class of disordered crystals with very high piezoelectric effect. In order to reveal its unique physical origins and to explore its application potential, a lot of investigations have been carried out both theoretically and ...
Xu, Bai-Xiang, Wang, Shuai
core  

Ferroelectric Catalysts in the Hydrogen Evolution Reaction: A Perspective

Advanced Science, EarlyView.
This perspective summarizes recent advances in ferroelectric (FE) catalysts for the hydrogen evolution reaction (HER). It first introduces HER fundamentals and FE mechanisms, then classifies FE catalysts into single‐phase, single‐atom‐modified, heterostructured, and other engineered types, with representative examples.
Rongxuan Lu, Weizhen Meng, Zhenxiang Cheng, Judy N. Hart, Michael Ferry, Sean Li, Wenxian Li   +6 more
wiley   +1 more source

Neuromorphic Devices and Computing for Sensing, Memory, and Control

Advanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu, Nicholas Schaffer, Xiao Yang   +2 more
wiley   +1 more source