Results 131 to 140 of about 5,651 (284)

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Oxygen Vacancies Driven Photoconductivity in Layered Cobaltite Epitaxial Films

Advanced Electronic Materials, EarlyView.
ABSTRACT Understanding photoinduced phenomena in complex oxides is crucial for developing next‐generation optoelectronic devices. Here, we report pronounced ultraviolet (UV) light‐induced photoconductivity in epitaxial PrBa1‐xCaxCo2O5+δ (x = 0.5) thin films grown on (001) LSAT substrates via pulsed laser deposition.
Yanbin Chen, Yiqun Liu, Xing Xu, Jing Ma, Ce‐wen Nan, Chonglin Chen   +5 more
wiley   +1 more source

High energy storage performance of (Na0.5Bi0.5)TiO3 thin film induced by stress engineering

Journal of Materiomics
Relaxor ferroelectrics are the primary candidates for high-performance energy storage dielectric capacitors. Here, stress engineering, which was realized by optimizing the lattice mismatch between (Na0.5Bi0.5)TiO3 film and SrRuO3/(La0.5Sr0.5)CoO3 bottom ...
Yichen Li, Yao Yao, Lei Zhou, Jing Wang, Lei Zhao   +4 more
doaj   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light

Advanced Electronic Materials, EarlyView.
A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto an amphiphilic axle was incorporated into droplet interface bilayers (DIBs). Photoswitching between the azobenzene configurations on the ring resulted in cycling between memristive and memcapacitive behaviors in lipid bilayers, enabling programmable ...
P.T. Podar, U.N.K. Conthagamage, J. Katsaras, V. García‐López, C. P. Collier   +4 more
wiley   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Local structural changes associated with relaxor behavior in Sn-doped BaTiO_{3}

Physical Review Research
Polar nanoregions (PNRs) play an important role in relaxor ferroelectrics. Despite decades of research, structural understanding of their formation is lacking. In this study, we investigate how PNRs form by using Ti K-edge x-ray absorption fine structure
Dongxiao Fan, Tomoki Kanazawa, Rie Haruki, Youngmin Kim, Shunsuke Nozawa   +4 more
doaj   +1 more source

MXenes: Bridging the Gap Between Advanced Materials and Sustainable Technologies in Energy and Environmental Applications

Advanced Electronic Materials, EarlyView.
MXenes, a family of two‐dimensional transition metal carbides and nitrides, exhibit exceptional physical and chemical properties tunable through surface functionalization. This review summarizes recent advances in MXene synthesis, property modulation, and composite fabrication.
Fatemeh Saeedi, Erfan Zare, Reza Ansari, Mojtaba Haghgoo, Saeid Sahmani   +4 more
wiley   +1 more source

Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review. [PDF]

Materials (Basel), 2020
Veerapandiyan V, Benes F, Gindel T, Deluca M.   +3 more
europepmc   +1 more source