Results 141 to 150 of about 292,067 (328)
Dielectric spectra of a new relaxor ferroelectric system Ba2LnTi2Nb3O15 (Ln=La, Nd) [PDF]
, 2004 S. Kamba +9 more
openalex +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
Advanced Electronic Materials, EarlyView.The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics
Advanced Electronic Materials, EarlyView.A flipped electronically reconfigurable STO/LAO freestanding membrane is demonstrated and integrated with various host platforms via controlled transfer. Using ultra‐low‐voltage electron‐beam lithography, conductive nanostructures are created at the buried STO/LAO interface. This novel approach enables heterogeneous integration of flipped complex oxide
Ruiqi Sun +9 more
wiley +1 more source
Glassy behavior study of dysprosium doped barium zirconium titanate relaxor ferroelectric [PDF]
, 2014 T. Badapanda
openalex +1 more source
Advanced Electronic Materials, EarlyView.5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu +8 more
wiley +1 more source
Broadband dielectric spectroscopy of Ba(Zr,Ti)O3: dynamics of relaxors and diffuse ferroelectrics [PDF]
, 2013 J. Petzelt +8 more
openalex +1 more source
Improving the performance of a lamb wave sensing array via relaxor ferroelectric single crystal transduction [PDF]
, 2023 M.J. Schipper
openalex +1 more source
Advanced Electronic Materials, EarlyView.Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley +1 more source
Band‐Edge Engineering of BiFeO3–KTaO3 Solid Solutions toward Efficient Solar Hydrogen Production
Advanced Energy and Sustainability Research, EarlyView.This study reports BiFeO3–KTaO3 solid solutions as efficient photocathodes for solar hydrogen production. Combining experiments with density functional theory, the authors demonstrate composition‐driven band‐edge tuning, achieving high photocurrent density and hydrogen generation rates.
Yassine Nassereddine +5 more
wiley +1 more source