Results 171 to 180 of about 289,079 (353)

Impact of Al/Ti Electrodes on the Performance and Operational Stability of n‐Channel Solution‐Processed Solid‐State Electrolyte‐Gated Transistors: Applications in Reservoir Computing

open access: yesAdvanced Electronic Materials, EarlyView.
The Al/Ti electrode demonstrates superior n‐channel performance and enhanced operational stability in diketopyrrolopyrrole (DPP)‐based organic electrolyte‐gated transistors (OEGTs) compared to conventional Au electrodes. A systematic investigation of polymer insulators and solid electrolyte gate dielectrics reveals electrode‐dependent contact ...
Quanhua Chen   +10 more
wiley   +1 more source

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

open access: yesAdvanced Electronic Materials, EarlyView.
High‐k dielectrics are in great demand for developing organic transistors operating at low voltages. However, the actual influence of high‐k dielectrics has been ambiguous. This work clarifies the correlation of dielectric constant and mobility through highly miscible high‐k polymer blends and provides a rational strategy on designing high‐performance ...
Beomjin Jeong, Kamal Asadi
wiley   +1 more source

Soft phonon modes and diffuse scattering in Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 relaxor ferroelectrics

open access: yesJournal of Materiomics, 2018
0.29Pb(In1/2Nb1/2)O3-0.45Pb(Mg1/3Nb2/3)O3-0.26PbTiO3 single crystals have been studied using triple-axis based elastic and inelastic neutron scattering.
Qian Li   +6 more
doaj  

Comment on "Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations". [PDF]

open access: yesSci Adv, 2019
Gehring PM   +8 more
europepmc   +1 more source

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

Configuration and Charge Dynamics of Defect‐Cluster‐Dipoles in CaTiO3 for Enhanced Permittivity

open access: yesAdvanced Electronic Materials, EarlyView.
In La‐doped CaTiO3, the clustering of La ion and Ca vacancies is clearly observed and the configuration of such defect‐cluster is validated. Combining photoelctronic and dielectric spectroscopy enables the dielectric relaxation process with the charge transfer routes.
Jian Wang   +4 more
wiley   +1 more source

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