Results 181 to 190 of about 2,097 (293)

Superior Capacitive Energy Storage of BaTiO₃-Based Polymorphic Relaxor Ferroelectrics Engineered by Mesoscopically Chemical Homogeneity. [PDF]

Adv Sci (Weinh)
Xie A, Yu Z, Lei J, Zhang Y, Tian A, Jiang X, Xie X, Yin Y, Fu Z, Li X, Zuo R.   +10 more
europepmc   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

High-entropy assisted capacitive energy storage in relaxor ferroelectrics by chemical short-range order. [PDF]

Nat Commun
Wei T, Zou J, Zhou X, Song M, Zhang Y, Nan C, Lin Y, Zhang D.   +7 more
europepmc   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

High Energy Density in All-Organic Polyimide-Based Composite Film by Doping of Polyvinylidene Fluoride-Based Relaxor Ferroelectrics. [PDF]

Polymers (Basel)
Wang C, Shen Y, Cao X, Zheng X, Ren K.
europepmc   +1 more source

Accelerating Discovery of Organic Molecular Crystals via Materials Informatics and Autonomous Experiments

Advanced Intelligent Discovery, EarlyView.
Materials informatics and autonomous experimentation are transforming the discovery of organic molecular crystals. This review presents an integrated molecule–crystal–function–optimization workflow combining machine learning, crystal structure prediction, and Bayesian optimization with robotic platforms.
Takuya Taniguchi, Kazuki Ishizaki, Ryo Fukasawa   +2 more
wiley   +1 more source

Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations. [PDF]

Sci Adv, 2016
Manley ME, Abernathy DL, Sahul R, Parshall DE, Lynn JW, Christianson AD, Stonaha PJ, Specht ED, Budai JD.   +8 more
europepmc   +1 more source

Thermally Stable Organic Synaptic Transistors Using a High‐Tg Polymer Electret

Advanced Intelligent Systems, EarlyView.
A high–glass‐transition‐temperature cyclic olefin copolymer (COC) electret enables thermally stable organic synaptic transistors for neuromorphic operation in harsh environments. UV–ozone treatment increases the trap density in COC, providing robust multilevel conductance and key synaptic functions (excitatory postsynaptic current/ inhibitory ...
Hoyoung Cho, Bombi Kim, Kyoungeun Lee, Moohyun Kim, Chaegwang Lim, Yeyun Bae, Jaeyeop Lee, Jiyoon Oh, Hyeok Kim, Jeongkyun Roh   +9 more
wiley   +1 more source

Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation

Advanced Intelligent Systems, EarlyView.
Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison, Kevin Nadaud, Josquin Harrison, Guillaume F. Nataf, Laura Bégon‐Lours   +4 more
wiley   +1 more source