Reentrant Phenomenon in Barium Titanate Zirconate-Based Relaxor Ferroelectrics. [PDF]
Kröll E +5 more
europepmc +1 more source
Freestanding PZT Films for Integrated Wearable Sensing and Intelligent Acoustic Recognition
A freestanding epitaxial PZT/LaNiO3/Pt heterostructure is achieved via water‐assisted delamination from mica, effectively eliminating substrate‐induced clamping and releasing intrinsic ferroelectricity. The released film exhibits substantially enhanced remanent polarization and piezoelectric response, delivering excellent mechanical flexibility and ...
Hailong Pan +6 more
wiley +1 more source
Uniaxial Strain‐Driven Ferroelastic Domain Tuning in LaAlO3${\rm LaAlO}_3$
The present work demonstrates based on AFM, μ$\umu$‐Raman spectroscopy, XRD, and first‐principles, that uniaxial strain provides a handle for tuning the ferroelastic domain populations in lanthanum aluminate, driving a continuous and controlled phase transition from a four‐variant rhombohedral crystal system to a two‐variant orthorhombic crystal system
Matthias Roeper +17 more
wiley +1 more source
The generalized Vogel-Fulcher-Tamman equation for describing the dynamics of relaxor ferroelectrics. [PDF]
Levit R +3 more
europepmc +1 more source
Unraveling the Effects of Depolarization in Ultrathin Barium Titanate
This article employs synchrotron‐based spectroscopy, time‐resolved electrical measurements, and phase‐field simulations to establish reverse‐domain formation as the mechanism of polarization loss in ultrathin BaTiO3${\rm BaTiO}_3$ films as a critical obstacle to low‐voltage ferroelectric devices.
Thomas Lee +6 more
wiley +1 more source
Comment on "Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations". [PDF]
Gehring PM +8 more
europepmc +1 more source
Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors
Graphical illustration of reconfigurable field effect transistor (RFET) operation modes, including n‐type, p‐type, and ambipolar transport, as well as their areas of application discussed in this review: digital circuit design, analog circuit design, post‐Shannon computing, and sensing. ABSTRACT Reconfigurable field‐effect transistors, short RFETs, are
Jens Trommer +19 more
wiley +1 more source
Collaborative design of polarization and antiferrodistortion configurations in high energy capacitive relaxor ferroelectrics. [PDF]
Wei K +10 more
europepmc +1 more source
Response to comment on "Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations". [PDF]
Manley ME +3 more
europepmc +1 more source
Trilayer oxide architecture introduces interfacial asymmetry and surface roughness in SRO/BTO/SRO heterostructures, creating a locally modulated polar and magnetic landscape. This design enhances the topological‐Hall‐like response, achieving a broad 5–90 K stability window and a maximum ρTHE of 0.8 µΩ cm, demonstrating an effective route to amplify ...
Sagar E. Shirsath +11 more
wiley +1 more source

