Results 191 to 200 of about 18,880 (284)

Multifunctional Vertical Bulk‐Heterojunction Transistors With Amorphous GaOx for Neuromorphic Perception‐to‐Decision

Advanced Science, EarlyView.
A multifunctional vertical bulk‐heterojunction transistor (MVBT) with amorphous GaOx integrates four functionalities within a single neuromorphic device. Gate‐source operation enables 254 nm deep‐ultraviolet sensing and threshold neuronal firing, whereas three‐terminal operation supports broadband UV–vis‐NIR synaptic functions and bias‐controlled ...
Jinkui Si, Qiong Zhuang, Rengjian Yu, Junling Zhou, Lan Yang, Changjie Zhou, Huili Zhu, Minshuai Wang, Xiaomei Cai, Qiubao Lin, Wangying Xu, Shuqiong Lan, Huipeng Chen   +12 more
wiley   +1 more source

Polar nanoregions in Pb(Mg1/3Nb2/3)O3 (PMN): insights from a supercell approach

Open Physics, 2011
Klotins Eriks, Popov Anatoli, Pankratov Vladimir, Shirmane Liana, Engers Davis   +4 more
doaj   +1 more source

Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration

Advanced Electronic Materials, EarlyView.
Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song, Chenxi Yu, Shangze Li, Dijiang Sun, Jiajia Zhang, Haotong Zhu, Xiaomin Xiao, Xionghao Qin, Xiaoyan Liu, Xing Zhang, Jinfeng Kang   +10 more
wiley   +1 more source

Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations. [PDF]

Sci Adv, 2016
Manley ME, Abernathy DL, Sahul R, Parshall DE, Lynn JW, Christianson AD, Stonaha PJ, Specht ED, Budai JD.   +8 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Tuning Local Modulus at Liquid Metal‐Polymer Interfaces Regulates Electrocaloric Effect in Ferroelectric Nanocomposites

Advanced Electronic Materials, EarlyView.
Liquid metal nanoparticles create mechanically compliant polymer interfaces that facilitate reversible dipolar reorientation under electric fields, whereas rigid interfaces impose stronger local constraints. This soft–rigid interface comparison reveals local interfacial modulus as a key parameter for tuning electrocaloric entropy change in ...
Tian Yao, Shanyu Zheng, Binzhou Sun, Zhenhua Ma, Feiyu Zhang, Lu Yu, Qiang Li, Ruhong Luo, Feihong Du, Yifan Zhao, Yezhan Lin, Chunyu Wang, Xin Chen, Shi‐Yang Tang, Tiannan Yang, Xiaoshi Qian   +15 more
wiley   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

Advanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee, Dong Hyeop Shin, Seung Joo Myoung, Soohong Eo, Wonjung Kim, Seeun Lee, Changwook Kim, Junjong Lee, Yoon Jung Lee, Sung‐Jin Choi, Sungjun Kim, Dae Hwan Kim   +11 more
wiley   +1 more source

Soft modes and ferroelectric order in relaxor ferroelectrics [PDF]

Acta Crystallographica Section A Foundations of Crystallography, 2002
openaire   +1 more source

A Multimodal Piezoelectric Vertical Sidewall Architecture for Scalable In‐Plane NEMS Resonators

Advanced Electronic Materials, EarlyView.
A vertical in‐plane piezoelectric resonator design shifts frequency tuning from film thickness to lithographic lateral definition, facilitating monolithic multiband integration. Initially validated via microscale length‐extensional resonators, this cavities‐first fabrication approach scales to the nanoscale for high‐frequency operation.
Artem Gabrelian, Kristina Bespalova, Glenn Ross, Mervi Paulasto‐Kröckel   +3 more
wiley   +1 more source