Results 181 to 190 of about 9,222 (286)

Collaborative design of polarization and antiferrodistortion configurations in high energy capacitive relaxor ferroelectrics. [PDF]

Nat Commun
Wei K, Duan J, Qi H, Ma L, Du Q, Yu H, Wang H, Shi X, Li G, Shuai Z, Li H.   +10 more
europepmc   +1 more source

Response to comment on "Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations". [PDF]

Sci Adv, 2019
Manley ME, Abernathy DL, Christianson AD, Lynn JW.   +3 more
europepmc   +1 more source

Graph Attention Neural Networks for Interpretable and Generalizable Prediction of Janus III–Vi Van Der Waals Heterostructures

Advanced Intelligent Discovery, EarlyView.
A crystal graph neural network based on the attention mechanism is proposed in this work. The model dynamically weights features through the attention mechanism, enabling precise prediction of properties of material from structural features. Here, taking Janus III–VI van der Waals heterostructures as a representative case, the properties have been ...
Yudong Shi, Zhao Zheng, Yinggan Zhang, Zhou Cui, Peng Lin, Cuilian Wen, Baisheng Sa, Zhimei Sun   +7 more
wiley   +1 more source

Energy harvesting based on Ericsson pyroelectric cycles in a relaxor ferroelectric ceramic [PDF]

, 2007
Gaël Sebald, Sébastien Pruvost, Daniel Guyomar   +2 more
openalex   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Superior Capacitive Energy Storage of BaTiO₃-Based Polymorphic Relaxor Ferroelectrics Engineered by Mesoscopically Chemical Homogeneity. [PDF]

Adv Sci (Weinh)
Xie A, Yu Z, Lei J, Zhang Y, Tian A, Jiang X, Xie X, Yin Y, Fu Z, Li X, Zuo R.   +10 more
europepmc   +1 more source

Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration

Advanced Intelligent Systems, EarlyView.
Ternary content addressable memory based on InGaZnO transistors is fabricated and its performance is evaluated through simulations for various distance‐based computing applications. Due to its high areal density, enhanced switching characteristics, and uniformity compared to other data similarity‐computing hardware candidates, the proposed memory is
Hyeong Jun Seo, Kanghyeon Byun, Minseung Kang, Youngchae Roh, Changhoon Joe, Sangbum Kim   +5 more
wiley   +1 more source

Phase transformation in lead titanate based relaxor ferroelectrics with ultra-high strain. [PDF]

Nat Commun
Zhang H, Li Z, Wang Y, Fortes AD, Saunders TG, Hao Y, Abrahams I, Yan H, Su L.   +8 more
europepmc   +1 more source

Broadband gigahertz dynamics of relaxor ferroelectric Pb(Sc1/2Nb1/2)O3-xPbTiO3 single crystal probed by Brillouin scattering [PDF]

, 2011
Seiji Kojima, Shinya Tsukada, Y. Hidaka, Alexei A. Bokov, Zuo‐Guang Ye   +4 more
openalex   +1 more source

Optoelectronic Neuromorphic System Based on Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistor for Spiking Neural Networks

Advanced Intelligent Systems, EarlyView.
An amorphous indium–gallium–zinc–oxide (IGZO)‐based optoelectronic neuromorphic system integrating light guides is introduced. The IGZO‐based optoelectronic synaptic transistor demonstrates high retention through a negative gate bias and emulates synaptic plasticity.
Yumin Yun, Junhyeong Park, Minsik Kong, Ji‐Ho Lee, Sunyeol Bae, Chanjin Park, Soo‐Yeon Lee   +6 more
wiley   +1 more source