Results 91 to 100 of about 190,755 (383)

Inter‐Layer Diffusion of Excitations in 2D Perovskites Revealed by Photoluminescence Reabsorption

open access: yesAdvanced Functional Materials, EarlyView.
Inter‐layer diffusion of photoexcitations is monitored in thin films of the 2D perovskite (PEA)2PbI4 by tracking time‐dependent changes in photoluminescence spectra induced by photon reabsorption effects. A low out‐of‐plane excitation diffusion coefficient of 0.26 × 10−4 cm2 s−1 is determined through 1D diffusion modeling.
Jiaxing Du   +7 more
wiley   +1 more source

Technological sustainable materials and enabling in semiconductor memory industry: A review

open access: yese-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
This paper provides an overview of current and future deployment of recyclable direct materials and sustainable materials through recycling of interconnect metals used in semiconductor assembly and packaging. Also, with the aim to study the key technical
Chong Leong Gan   +4 more
doaj  

Reliability Characteristics of Metal-Insulator-Semiconductor Capacitors with Low-Dielectric-Constant Materials [PDF]

open access: gold, 2023
Yi-Lung Cheng   +4 more
openalex   +1 more source

Superconducting proximity effect in epitaxial Al-InAs heterostructures

open access: yes, 2019
Semiconductor-based Josephson junctions provide a platform for studying proximity effect due to the possibility of tuning junction properties by gate voltage and large-scale fabrication of complex Josephson circuits.
Dartiailh, Matthieu C.   +5 more
core   +1 more source

Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations [PDF]

open access: yes, 2007
This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs.
Esseni, David   +4 more
core   +3 more sources

A Close Look at the Local Structure of Functional Polymers: The Example of Poly(Vinylidene Fluoride)

open access: yesAdvanced Functional Materials, EarlyView.
To accurately develop structure‐property relationships in functional macromolecules, it is increasingly important to consider the local chain arrangement in addition to long‐range order. It is demonstrated in the case of poly(vinylidene fluoride) that solid‐state nuclear magnetic resonance (NMR) spectroscopy can provide detailed insights into the local
Henry J. Kantrow   +6 more
wiley   +1 more source

Research methods of reliability indicators of rectifier diode in tablet execution

open access: yesEPJ Web of Conferences, 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj   +1 more source

Characterization of High Temperature Optocoupler for Power Electronic Systems [PDF]

open access: yes, 2019
High-temperature devices have been rapidly increas due to the implementation of new technologies like silicon carbide, high-temperature ceramic, and others. Functionality under elevated temperatures can reduce signal integrity reducing the reliability of
Gonzalez, David
core   +2 more sources

Heat Conduction Modulation in Incommensurate Twisted Stacking of Transition‐Metal Dichalcogenide

open access: yesAdvanced Functional Materials, EarlyView.
The interlayer thermal conductance in twisted bilayer TMDs is initially investigated experimentally by the thermoreflectance method. The overlap of lattice vibrations within individual layers and the interlayer interactions, as elucidated through both Raman spectroscopy and molecular dynamics simulations, are demonstrated to be critical factors in ...
Bin Xu   +6 more
wiley   +1 more source

Colossal electroresistance in metal/ferroelectric/semiconductor tunnel diodes for resistive switching memories [PDF]

open access: yes, 2012
We propose a tunneling heterostructure by replacing one of the metal electrodes in a metal/ferroelectric/metal ferroelectric tunnel junction with a heavily doped semiconductor. In this metal/ferroelectric/semiconductor tunnel diode, both the height and the width of the tunneling barrier can be electrically modulated due to the ferroelectric field ...
arxiv   +1 more source

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