Results 131 to 140 of about 2,332,362 (329)
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
New possibilities of photoelectric method of determination barrier height in structures Au–n-GaAs
Two-sided photosensitive Au–n–GaAs structures fabricated by a chemical method have been investigated. For the first time, it was found that illumination from the GaAs side increases photosensitivity in the Fowler region of the spectrum by approximately ...
D. Melebayev +3 more
doaj
The reliability of the power semiconductor module on the operating temperature [PDF]
E. V. Kravchenko, Dariya Yu. Ivleva
openalex +1 more source
Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability [PDF]
Tomàs Lledó-Ponsati +4 more
openalex +1 more source
Self‐Hybridized Exciton‐Polariton Photodetectors From Layered Metal‐Organic Chalcogenolates
Self‐hybridized exciton‐polariton photodetectors are demonstrated using high refractive index mithrene, eliminating the need for top mirrors. This simplified architecture enables tunable sub‐bandgap photodetection via lower exciton‐polariton states and enhanced carrier transport through ultrafast polariton group velocities.
Bongjun Choi +3 more
wiley +1 more source
We present ultrathin flexible transparent electrodes through iCVD‐enabled molecular control of 10 nm gold films on poly(dimethylaminomethylstyrene). In vivo validation demonstrated photoelectric artifact reduction vs. opaque electrodes and preservation of natural neural dynamics.
Tae Jin Mun +11 more
wiley +1 more source
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon +6 more
wiley +1 more source
Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]
Chung SW, Yoon SH, Jeong JK.
europepmc +1 more source
Uncovering the Origin of Efficiency Roll‐Off in TADF OLEDs
OLEDs based on thermally activated delayed fluorescent (TADF) materials often suffer from a severe drop in efficiency at high brightness levels. This work presents a technique to uncover the source of this efficiency drop, and quantifies the exciton‐exciton and exciton‐polaron annihilation processes responsible for efficiency losses in our TADF OLEDs ...
Liam G. King +3 more
wiley +1 more source
ABSTRACT In this work, we introduce a trifluoromethoxy (OCF3) group as a pseudo‐halogen terminal group design for non‐fullerene acceptors, which combines strong inductive electron‐withdrawing ability with moderate resonance donation. The as‐synthesized BTP‐OCF3, when benchmarked against its methoxy analogue BTP‐OCH3, demonstrates narrowed bandgap ...
Chunliang Li +16 more
wiley +1 more source

