Results 131 to 140 of about 99,199 (301)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Transforming Cellulose Into Functional Three‐Dimensional Structures

Advanced Functional Materials, EarlyView.
Cellulose is promising for replacing synthetic polymers due to its excellent mechanical properties and low cost. This review highlights the recent advancements in transforming cellulose into functional 3D structures, including liquid gels and porous materials.
Xia Sun, Hao Sun, Penghui Zhu, Yonggang Wu, Anna Palmer, Feng Jiang   +5 more
wiley   +1 more source

Flexible Optical Fiber Stress/Temperature Dual‐Mode Sensing Based on CaZnOS:Nd,Er

Advanced Functional Materials, EarlyView.
Temperature and stress sensing based on flexible optical fibers may be the key to future artificial intelligence's perception of the world, here an optical fiber sensor capable of realizing such dual mode sensing is preliminary confirmed based on CaZnOS:Nd3+,Er3+.
Pan Zheng, Yao Xiao, Puxian Xiong, Sijie Su, Anping Yang, Xuesong Wang, Shengbin Xu, Peishan Shao, Zhiyao Zhou, Sheng Wu, Enhai Song, Jiulin Gan, Dongdan Chen   +12 more
wiley   +1 more source

Present Problems of Reliability of Power Semiconductor Devices

Acta Polytechnica, 2000
The paper presents an overview of the main causes of failures of modern switching devices as power MOSFETs, IGBTs, GTOs. The attention is paid to problems of both homogeneity of semiconductor structures and operating conditions, especially at high ...
V. Benda
doaj  

Testing Method and Reliability Design of Reliability Estimation in Mounting Power Electronics Semiconductor

, 2002
Nagatoshi Okabe, Mitsuyoshi TSUTSUMI, Xia Zhu   +2 more
openalex   +2 more sources

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

Advanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng, Ying Liu, Jialin Gong, Yalong Jiao, Xiaoming Zhang, Wenxian Li, Zhenxiang Cheng, Tie Yang   +7 more
wiley   +1 more source

A Synergistic Effect of Thermal Cycle and Bending on the Reliability of Ceramics-Metal Joint body Semiconductor Substrates

, 2003
Mitsuyoshi TSUTSUMI, Nagatoshi OKABE, Xia Zhu   +2 more
openalex   +2 more sources

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty

IET Power Electronics
Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data.
Qunfang Wu, Boyuan Xu, Lan Xiao, Qin Wang   +3 more
doaj   +1 more source

High Performance Room Temperature Multiferroic Properties of w‐MnSe Altermagnet

Advanced Functional Materials, EarlyView.
Using first‐principles calculations, for the first time the Altermagneto‐Ferroelectric Coupling Effect (AFCE) is proposed, which enables control of both electric polarization and spin splitting in the band structure due to polyhedral rotations. This uncovers robust multiferroicity in wurtzite MnSe at room temperature, offering an exciting route for ...
Djamel Bezzerga, Imran Khan, Jisang Hong
wiley   +1 more source