Results 141 to 150 of about 2,092,774 (331)

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor [PDF]

Zhihua Dong, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng, Baoshun Zhang   +9 more
openalex   +1 more source

Heterostructure‐Driven D‐Band of MoS2 Engineering Catalytic Polysulfide Conversion in Lithium–Sulfur Batteries

Advanced Functional Materials, EarlyView.
Research on phase ratio‐dependent modulation of built‐in electric fields and d‐band centers in yolk–shell structured C@MoS2‐MoSe2 has determined that the C@3MoS2‐1MoSe2 configuration is optimal, which can achieve an optimal d‐band center position and enhance electrochemical performance.
Ruixian Duan, Guiqiang Cao, Jun Li, Qinting Jiang, Chenyang Hou, Huijuan Yang, Jingjing Wang, Wenbin Li, Changhong Wang, Kun Zhang, Xueliang Sun, Xifei Li   +11 more
wiley   +1 more source

Advanced WBG power semiconductor packaging: nanomaterials and nanotechnologies for high-performance die attach paste. [PDF]

Nano Converg
Ju YM, Kim TW, Lee SH, Lee HJ, Ahn J, Kim HS.   +5 more
europepmc   +1 more source

Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology [PDF]

, 2009
Wu-Te Weng, Yao‐Jen Lee, Horng‐Chih Lin, Tiao−Yuan Huang   +3 more
openalex   +1 more source

Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

, 2022
Stephen J. Moxim, Fedor V. Sharov, David Russell Hughart, Gaddi S. Haase, Colin G. McKay, Elias B. Frantz, Patrick M. Lenhan   +6 more
openalex   +2 more sources

Enhanced Performance and In Situ TEM Investigation in High Entropy Alloy Electrode Based Memristors

Advanced Functional Materials, EarlyView.
This study utilizes in situ TEM, EDS, EELS, and APT to reveal switching in HEA/ZnO/Nb:STO RRAM. High diffusivity of Mn lowers the SET voltage to 1.5 V. Cr stabilizes the oxygen layer, while Fe, Co, and Ni stabilize the electrode. Based on these observations, the device achieves 30 ns switching, a 10⁷ memory window, and excellent endurance, being ...
Jing‐Yuan Tsai, Chun‐Wei Huang, Jui‐Yuan Chen, Che‐Hung Wang, Ping‐Hsien Wu, Jia‐Wei Chen, Yu‐Chen Yang, Tung‐huan Chou, Kun‐lin Lin, Ying‐Hao Chu, Wen‐Wei Wu   +10 more
wiley   +1 more source

Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias. [PDF]

Micromachines (Basel)
Ha H, Kim H, Lee S, Choi S, Choi C, Yusoff WYW, Shan A, Lim S, Hwang B.   +8 more
europepmc   +1 more source

Historical Overview of Semiconductor Device Reliability for Telecommunication Networks––Field Data, Prediction Model of Device Failure Rate, and Wear-out Failure Analyses at NTT [PDF]

, 2013
Noboru Shiono, Eisuke Arai, S. Mutoh
openalex   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

Advanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon, Dong Ho Lee, Seyoung Oh, Jongwon Yoon, Hyo‐Bae Kim, Ji‐Hoon Ahn, Woojin Park, Han Seul Kim, Byungjin Cho   +8 more
wiley   +1 more source

Enhancing Confidence and Interpretability of a CNN-Based Wafer Defect Classification Model Using Temperature Scaling and LIME. [PDF]

Micromachines (Basel)
Lee J, Ju Y, Lim J, Hong S, Baek SW, Lee J.   +5 more
europepmc   +1 more source