Results 141 to 150 of about 120,829 (333)
Analyzing GHG emission forecasting in Korea's semiconductor and display industries using grey model
The semiconductor and display industries are key to the transition to a digital economy and are leading export industries that drive the economy of Korea.
Inkyung Cho, Soohyeon Kim, Miyeon Yoo
doaj +1 more source
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey +5 more
wiley +1 more source
Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors [PDF]
Ke Hu +9 more
openalex +1 more source
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim +14 more
wiley +1 more source
4332 Strength and Life Reliability on Semiconductor Substrate by Difference Bond Methods
Nagatoshi OKABE +3 more
openalex +1 more source
Two‐Dimensional Materials as a Multiproperty Sensing Platform
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana +11 more
wiley +1 more source
A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty
Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data.
Qunfang Wu +3 more
doaj +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Firewalls in Semiconductor Assembly: Ensuring Quality & Reliability in Automotive Applications [PDF]
Prasad Dhond
openalex +1 more source
A mineral‐based supra‐nano amorphous ruthenium dioxide composite (a‐Ru0.5‐AM) was designed, achieving 97% broadband solar absorption. Under one sun, it reaches 87.91 ± 0.32 °C with a distinct thermal buffering effect that favors thermal confinement.
Yunchen Long +13 more
wiley +1 more source

