Results 141 to 150 of about 190,755 (383)
Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays [PDF]
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical ...
arxiv
Greening Consumer Electronics: Moving Away From Bromine and Chlorine [PDF]
Presents case studies of seven electronics companies that have engineered environmental solutions that eliminate the use of most brominated and chlorinated chemicals that generate toxic materials.
Alexandra McPherson+2 more
core
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du+11 more
wiley +1 more source
III-nitride power semiconductor technology toward carbon peaking and carbon neutrality goals
Guided by the national development strategy of China about carbon peaking and carbon neutrality, it is necessary to use clean energy and electricity in energy consumption, and power semiconductor technology plays a crucial part in this 2 processes.
LUO Zhuoran+3 more
doaj
Ordering effects in diluted magnetic semiconductors [PDF]
We review recently developed two-step approach for description of electronic and magnetic properties of a new class of materials, the diluted magnetic semiconductors. In the first step we construct, on the basis of the state-of-the-art first-principles electronic structure calculations, the effective Ising and Heisenberg Hamiltonians which describe ...
arxiv
Reliability Study of Reference Semiconductor Encapsulation Materials for Biocompatible Packaging [PDF]
Karl Malachowski+6 more
openalex +1 more source
An Advanced Three-Level Active Neutral-Point-Clamped Converter With Improved Fault-Tolerant Capabilities [PDF]
A resilient fault-tolerant silicon carbide (SiC) three-level power converter topology is introduced based on the traditional active neutral-point-clamped converter.
He, Jiangbiao+2 more
core +1 more source
The metal–insulator transition temperature (TMI) is continuously tuned by the systematic change of relative thickness in VO2 and TiO2 films (tVO2/tTiO2${t_{{\mathrm{V}}{{\mathrm{O}}_2}}}/{t_{{\mathrm{Ti}}{{\mathrm{O}}_2}}}$) in freestanding TiO2/VO2/TiO2 tri‐layers.
Sungwon Lee+5 more
wiley +1 more source
This study compares Vth-instability in D-mode MIS-HEMT devices between two epitaxial layers, AlN/AlGaN/GaN superlattice-W1, and three-step graded AlGaN-W2.
Shivendra K. Rathaur+3 more
doaj +1 more source
2D Junction Profiling on Semiconductor Device Reliability Fail [PDF]
Y.Y. Wang+7 more
openalex +1 more source