Results 181 to 190 of about 190,755 (383)

Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability

, 2022
Stephen J. Moxim, Fedor V. Sharov, David Russell Hughart, Gaddi S. Haase, Colin G. McKay, Elias B. Frantz, Patrick M. Lenhan   +6 more
openalex   +2 more sources

Transforming Cellulose Into Functional Three‐Dimensional Structures

Advanced Functional Materials, EarlyView.
Cellulose is promising for replacing synthetic polymers due to its excellent mechanical properties and low cost. This review highlights the recent advancements in transforming cellulose into functional 3D structures, including liquid gels and porous materials.
Xia Sun, Hao Sun, Penghui Zhu, Yonggang Wu, Anna Palmer, Feng Jiang   +5 more
wiley   +1 more source

Historical Overview of Semiconductor Device Reliability for Telecommunication Networks––Field Data, Prediction Model of Device Failure Rate, and Wear-out Failure Analyses at NTT [PDF]

, 2013
Noboru Shiono, Eisuke Arai, S. Mutoh
openalex   +1 more source

Flexible Optical Fiber Stress/Temperature Dual‐Mode Sensing Based on CaZnOS:Nd,Er

Advanced Functional Materials, EarlyView.
Temperature and stress sensing based on flexible optical fibers may be the key to future artificial intelligence's perception of the world, here an optical fiber sensor capable of realizing such dual mode sensing is preliminary confirmed based on CaZnOS:Nd3+,Er3+.
Pan Zheng, Yao Xiao, Puxian Xiong, Sijie Su, Anping Yang, Xuesong Wang, Shengbin Xu, Peishan Shao, Zhiyao Zhou, Sheng Wu, Enhai Song, Jiulin Gan, Dongdan Chen   +12 more
wiley   +1 more source

Reliability Express Control of the Gate Dielectric of Semiconductor Devices

, 2018
В. А. Солодуха, G. G. Chigir, В. А. Пилипенко, V. A. Filipenya, В. А. Горушко   +4 more
openalex   +2 more sources

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

Advanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng, Ying Liu, Jialin Gong, Yalong Jiao, Xiaoming Zhang, Wenxian Li, Zhenxiang Cheng, Tie Yang   +7 more
wiley   +1 more source

Kaizen Solution Preventing Mixing of Production and Reliability Parts in Semiconductor Assembly Manufacturing Setting [PDF]

, 2019
Richard Bryan Gonzales, Marilyn Gagan, Ma. Kristina Pauline Renos, Jolan Monfero, Shireen Buenaventura, Dave John Sagarino   +5 more
openalex   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source

High Performance Room Temperature Multiferroic Properties of w‐MnSe Altermagnet

Advanced Functional Materials, EarlyView.
Using first‐principles calculations, for the first time the Altermagneto‐Ferroelectric Coupling Effect (AFCE) is proposed, which enables control of both electric polarization and spin splitting in the band structure due to polyhedral rotations. This uncovers robust multiferroicity in wurtzite MnSe at room temperature, offering an exciting route for ...
Djamel Bezzerga, Imran Khan, Jisang Hong
wiley   +1 more source

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor [PDF]

Zhihua Dong, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng, Baoshun Zhang   +9 more
openalex   +1 more source