Results 181 to 190 of about 99,199 (301)

Analyzing GHG emission forecasting in Korea's semiconductor and display industries using grey model

Sustainable Futures
The semiconductor and display industries are key to the transition to a digital economy and are leading export industries that drive the economy of Korea.
Inkyung Cho, Soohyeon Kim, Miyeon Yoo
doaj  

Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors [PDF]

, 2006
Kehuey Wu, J. F. Chen, Yan‐Kuin Su, J. R. Lee, Kaung-Wan Lin, J.R. Shih, S. L. Hsu   +6 more
openalex   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang   +5 more
wiley   +1 more source

Reliability of semiconductor and gas-filled diodes for over-voltage protection exposed to ionizing radiation

, 2009
Koviljka Stanković, Miloš Vujisić, Edin Dolićanin   +2 more
openalex   +2 more sources

Additive‐Driven Phase Control for Stable and Efficient CsPbI₃ Solar Cells Via Ambient Low‐Temperature Processing

Advanced Functional Materials, EarlyView.
CsPbI₃ perovskite solar cells face stability issues due to high annealing temperatures and moisture. Butylammonium acetate (BAAc) enables stable phase formation at 160°C in ambient laboratory conditions, enhancing efficiency and stability, achieving 18.6% PCE, and maintaining over 81% efficiency after 1,000 hours of maximum power point tracking under 1
Narendra Pai, Aaron Seeber, Wen Liang Tan, Luke J. Sutherland, Chris Easton, Wenqi Yan, Yogesh Gulia, Yesim Gozukara, Jueng‐Eun Kim, Mei Gao, Dechan Angmo   +10 more
wiley   +1 more source

Device reliability challenges for modern semiconductor circuit design – a review [PDF]

, 2009
Christian Schlünder
openalex   +1 more source

Molecularly Tailored Elastomeric Block‐Copolymers for Intrinsically Stretchable Organic Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Molecular‐level engineering of SEBS elastomers is introduced for skin‐inspired electronics. By systematically modulating the S/EB molar ratio in SEBS, precise control is achieved over nanoscale morphology, mechanical properties, metal‐elastomer adhesion, and dielectric performance.
Min Woo Jeong, Seon Hoo Park, Min Hyouk Kim, Jun Su Kim, Tae Uk Nam, Ngoc Thanh Phuong Vo, Kyu Ho Jung, Hye Rin Chang, Thuy An Nguyen, Jin Young Oh   +9 more
wiley   +1 more source

Quantification of metal oxide semiconductor field effect transistor device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics [PDF]

, 2009
Barry O’Sullivan, M. Aoulaiche, M. J. Cho, T. Kauerauf, R. Degraeve, Hiroshi Okawa, T. Schram, T. Hoffmann, G. Groeseneken, S. Biesemans, Takashi Nakabayashi, Atsushi Ikeda‐Ohno, M. Niwa   +12 more
openalex   +1 more source

Enhancing Mechanical Deformability of Rigid Conjugated Polymers through Functional Additive‐Induced Persistence Length Modulation

Advanced Functional Materials, EarlyView.
This study demonstrates a molecular strategy to enhance the stretchability of conjugated polymers by incorporating plasticizing molecular additives (PMAs). PMAs reduce the persistence length and promote chain entanglement, enabling deformable thin films with preserved electrical performance. A systematic analysis combining rheology, neutron scattering,
Sein Chung, Seung Hyun Kim, Sanghyo Kim, Eunsol Ok, Byeong Jin Kim, Jimin Kim, Jiyeong Shin, Taehun Chung, Jong Dae Jang, Siyoung Lee, Boseok Kang, Kilwon Cho   +11 more
wiley   +1 more source

Influence of the Initial Microstructure of Al-chip-metallization on reliability of power semiconductor

Shilin Zhao, Erxian Yao, Yan Tong, C. L. Wang, Yang Chen, Xu Yang   +5 more
openalex   +1 more source