Results 201 to 210 of about 121,599 (302)
Repurposing Si CMOS nonidealities for stochastic and analog image processing. [PDF]
Kwak B +11 more
europepmc +1 more source
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji +15 more
wiley +1 more source
Challenges and prospects of 2D electronics for future monolithic complementary field-effect transistors. [PDF]
Islam MM +15 more
europepmc +1 more source
A highly‐emissive organic photovoltaic employs donor–acceptor pairs with alternately localized frontier molecular orbitals, preserving high triplet energies and small reorganization energies to suppress non‐radiative recombination. As a result, it exhibits a high open‐circuit voltage approaching the Shockley–Queisser limit and a high ...
Qing‐Jun Shui +7 more
wiley +1 more source
A step-up DC-DC converter with high voltage gain and soft switched capability and minimum phase characteristic. [PDF]
Salehi SM, Varjani AY.
europepmc +1 more source
Flexible Ag2Te thin films achieving a record‐high mobility of 4756 cm2 V−1 s−1 and a peak power factor of 18.5 µW cm−1 K−2 are developed via precise structural control. The assembled flexible devices demonstrate excellent mechanical stability and ultrafast voltage response, enabling precise thermal detection when integrated into a robotic gripper for ...
Yue‐Xing Chen +15 more
wiley +1 more source
Advances and Perspectives in Gate Dielectric Thin Films for 4H-SiC MOSFETs. [PDF]
Bai Z +7 more
europepmc +1 more source
A Scalable Perovskite Platform With Multi‐State Photoresponsivity for In‐Sensor Saliency Detection
A scalable in‐sensor computing platform (32 × 32 array) with ultra‐low variability is developed by incorporating ferroelectric copolymers into halide perovskite thin films. These devices achieve 1000 programmable photoresponsivity states and high thermal reliability.
Xuechao Xing +10 more
wiley +1 more source
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]
Das A +18 more
europepmc +1 more source

