Results 211 to 220 of about 1,561,898 (299)

Spike‐Type Band Alignment via in2Se3/CuI Charge‐Transport Engineering Enables 26% Efficient Lead‐Free RbSn0.5Ge0.5I3 Perovskite Solar Cells

Advanced Materials Interfaces, EarlyView.
A lead‐free and Cd‐free RbSn₀.5Ge₀.5I3 perovskite solar cell is optimized through In2Se3/CuI charge‐transport engineering using SCAPS‐1D. Spike‐type band alignment suppresses interfacial recombination, enhances charge extraction, and achieves a power conversion efficiency of 26.01%, providing an effective strategy for high‐performance and ...
Md. Al Amin, Md. Sanwar Hossain, Md. Feroz Ali, Md Shafiul Alam, Mohammad Ali, Mohammed A. AlAqil   +5 more
wiley   +1 more source

Vibration Resistance Optimization of Housing Based on CCD and Multi-Objective PSO. [PDF]

Micromachines (Basel)
Cheng L, Wei B, Dai X, Bao Y.
europepmc   +1 more source

Thermal Enhancement of TADF‐OLED Performance: Size of Active Area Matters

Advanced Materials Interfaces, EarlyView.
Large‐area TADF‐based OLEDs can be used as thermally assisted light‐emitting devices, in which moderate waste heat can partially compensate for efficiency losses associated with increasing active area. ABSTRACT Temperature significantly impacts the performance of light‐emitting diodes, typically causing degradation as they heat up. However, OLEDs using
Demyd V. Pekur, Denis M. Khmil, Petro S. Smertenko, Alexander N. Fedoryak, Chih‐Hung Ko, Chih‐Hao Chang, Dovydas Blazevicius, Gintare Krucaite, Saulius Grigalevicius, Oleg P. Dimitriev   +9 more
wiley   +1 more source

Two-photon states meet polarization-gradient metasurfaces for nanometric, low-dose lateral-displacement metrology. [PDF]

Light Sci Appl
Deng QM, Zeng JH, Li FJ, Deng ZL.
europepmc   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications. [PDF]

Sci Rep
Ashok T, Pandey CK.
europepmc   +1 more source

Deep Eutectic Solvent‐Enhanced PEDOT: PSS/NR Foam Piezoresistive Sensor for High‐Sensitivity Wearable Devices and Sleep Monitoring Applications

Advanced Materials Interfaces, EarlyView.
A high‐performance piezoresistive foam sensor is developed by integrating natural rubber, PEDOT: PSS, and a deep eutectic solvent (DES). DES effectively detaches insulating PSS from PEDOT, dramatically amplifying electrical conductivity and sensitivity.
Shun Zhang, Jizu Ma, Peng Yu, Lei Tan, Yan Xu   +4 more
wiley   +1 more source

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory. [PDF]

Commun Eng
Chung SW, Yoon SH, Jeong JK.
europepmc   +1 more source

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

Advanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu, Yiran Li, Tsung‐Han Tsai, Sudip Acharya, Yi Lu, Jie Zhou, Samuel A. Haessly, Shui‐Qing Yu, Nanditha M. Dissanayake, Edward K. Huang, Jiarui Gong, Zhenqiang Ma   +11 more
wiley   +1 more source

Conjugated Polymer Semiconductors Enabled Multifunctional Interfacial Engineering for High-Performance Inverted Perovskite Solar Cells. [PDF]

Adv Mater
Chen J, Shao C, Wang L, Zhang Y, Wei H, Che Q, Yang S, Huang W, Chen Z, Zhang W, Li D, Meng Q, Wang J, Yu G.   +13 more
europepmc   +1 more source