Results 131 to 140 of about 6,518 (175)

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Applied Physics Reviews, 2022
Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding between crystalline substrate and atomic building blocks, has been a key technique in the thin-film and heterostructure applications of semiconductors. However, the epitaxial growth technique is limited by different lattice mismatch and thermal expansion ...
Huije Ryu, Hyunik Park, Joung-Hun Kim, Fan Ren, Jihyun Kim, Gwan-Hyoung Lee, Stephen J. Pearton   +6 more
openaire   +1 more source

A Reconfigurable Remotely Epitaxial VO₂ Electrical Heterostructure

Nano Letters, 2019
The reconfigurability of the electrical heterostructure featured with external variables, such as temperature, voltage, and strain, enabled electronic/optical phase transition in functional layers has great potential for future photonics, computing, and adaptive circuits.
Yuwei Guo, Xin Sun, Jie Jiang, Baiwei Wang, Xinchun Chen, Xuan Yin, Wei Qi, Lei Gao, Lifu Zhang, Zonghuan Lu, Ru Jia, Saloni Pendse, Yang Hu, Zhizhong Chen, Esther Wertz, Daniel Gall, Jing Feng, Toh-Ming Lu, Jian Shi   +18 more
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Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors

Science, 2022
Recent advances in flexible and stretchable electronics have led to a surge of electronic skin (e-skin)–based health monitoring platforms. Conventional wireless e-skins rely on rigid integrated circuit chips that compromise the overall flexibility and consume considerable power.
Yeongin Kim, Jun Min Suh, Jiho Shin, Yunpeng Liu, Hanwool Yeon, Kuan Qiao, Hyun S. Kum, Chansoo Kim, Han Eol Lee, Chanyeol Choi, Hyunseok Kim, Doyoon Lee, Jaeyong Lee, Ji-Hoon Kang, Bo-In Park, Sungsu Kang, Jihoon Kim, Sungkyu Kim, Joshua A. Perozek, Kejia Wang, Yongmo Park, Kumar Kishen, Lingping Kong, Tomás Palacios, Jungwon Park, Min-Chul Park, Hyung-jun Kim, Yun Seog Lee, Kyusang Lee, Sang-Hoon Bae, Wei Kong, Jiyeon Han, Jeehwan Kim   +32 more
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Remote Phononic Effects in Epitaxial Ruddlesden–Popper Halide Perovskites

The Journal of Physical Chemistry Letters, 2018
Despite their weak nature, van der Waals (vdW) interactions have been shown to effectively control the optoelectronic and vibrational properties of layered materials. However, how vdW effects exist in Ruddlesden-Popper layered halide perovskites remains unclear.
Zhizhong Chen, Yiping Wang, Xin Sun, Yu Xiang, Yang Hu, Jie Jiang, Jing Feng, Yi-Yang Sun, Xi Wang, Gwo-Ching Wang, Toh-Ming Lu, Hanwei Gao, Esther A. Wertz, Jian Shi   +13 more
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Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer

ACS Nano, 2023
Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far.
Yuning Wang, Yipu Qu, Yu Xu, Didi Li, Zhengqian Lu, Jianjie Li, Xujun Su, Guobin Wang, Lin Shi, Xionghui Zeng, Jianfeng Wang, Bing Cao, Ke Xu   +12 more
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Van der Waals epitaxy and remote epitaxy of LiNbO3 thin films by pulsed laser deposition

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2021
Nonlinear oxides such as LiNbO3 have found many applications in both conventional electro-optics and quantum optics. In this work, we demonstrate the van der Waals and remote epitaxy of LiNbO3 films on muscovite mica and graphene-buffered sapphire, respectively, by pulsed laser deposition.
Ru Jia, Hyun S. Kum, Xin Sun, Yuwei Guo, Baiwei Wang, Peijiao Fang, Jie Jiang, Daniel Gall, Toh-Ming Lu, Morris Washington, Jeehwan Kim, Jian Shi   +11 more
openaire   +1 more source

Remote epitaxy of GaN via graphene on GaN/sapphire templates

Journal of Physics D: Applied Physics, 2021
Abstract Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fully understand the III-nitride formation on the van der Waals surface of a ...
Kazimieras Badokas, Arūnas Kadys, Jūras Mickevičius, Ilja Ignatjev, Martynas Skapas, Sandra Stanionytė, Edvinas Radiunas, Giedrius Juška, Tadas Malinauskas   +8 more
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Remote epitaxy of copper on sapphire through monolayer graphene buffer

Nanotechnology, 2018
In this work, we show that remote heteroepitaxy can be achieved when Cu thin film is grown on single crystal, monolayer graphene buffered sapphire(0001) substrate via a thermal evaporation process. X-ray diffraction and electron backscatter diffraction data show that the epitaxy process forms a prevailing Cu crystal domain, which is remotely registered
Zonghuan Lu, Xin Sun, Weiyu Xie, Aaron Littlejohn, Gwo-Ching Wang, Shengbai Zhang, Morris A Washington, Toh-Ming Lu   +7 more
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Remote epitaxy using graphene enables growth of stress-free GaN

Nanotechnology, 2019
The properties of group III-Nitrides (III-N) such as a large direct bandgap, high melting point, and high breakdown voltage make them very attractive for optoelectronic applications. However, conventional epitaxy on SiC and sapphire substrates results in strained and defective films with consequently poor device performance.
Journot, T, Okuno, H, Mollard, N, Michon, A, Dagher, R, Gergaud, P, Dijon, J, Kolobov, A, Hyot, B   +8 more
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Remote Epitaxy: Fundamentals, Challenges, and Opportunities

Nano Letters
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials.
Bo-In Park, Jekyung Kim, Kuangye Lu, Xinyuan Zhang, Sangho Lee, Jun Min Suh, Dong-Hwan Kim, Hyunseok Kim, Jeehwan Kim   +8 more
openaire   +2 more sources