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Tileable Monolithic ReRAM Memory Design
2020 IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS), 2020Non-volatile memory, such as resistive RAM (ReRAM), is compatible with standard CMOS logic processes, allowing a sizable main memory system to be integrated into a CPU’s die. ReRAM bitcells are fabricated within crosspoint sub-arrays that leave the bulk of transistors underneath the sub-arrays vacant.
Meenatchi Jagasivamani +7 more
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ReRAM-based accelerator for deep learning
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2018Big data computing applications such as deep learning and graph analytic usually incur a large amount of data movements. Deploying such applications on conventional von Neumann architecture that separates the processing units and memory components likely leads to performance bottleneck due to the limited memory bandwidth.
Bing Li 0017 +5 more
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The background of ReRAM devices
2021In this chapter, we will first introduce the characteristics of resistive random-access memory (ReRAM) devices. Post-characterization of the ReRAMs, we introduce the structural design of the ReRAMs followed by a few applicational designs of ReRAMbased devices.
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Operating Temperature Based Vulnerabilities in ReRAM
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS), 2019Resistive Random-Access Memory (ReRAM) devices have caught significant research attention as scalable non-volatile memory (NVM) technology for high-density data storage in 3-D crossbar architectures. ReRAM devices can switch with low programming voltages (
Thomas Schultz 0004, Rashmi Jha
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ReRAM for Embedded Application: A Review
2021 International Symposium on Electronics and Smart Devices (ISESD), 2021Recent developments in memory devices have given rise to many ideas about the need for more specific memory characteristics in new devices. This paper discusses the results of reviews of several papers regarding the comparison of ReRAM benchmarks in their application which aims to determine the characteristics of embedded ReRAM (eReRAM) further against
Muhammad Arbi Minanda +3 more
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Approximate in-Memory Computing on ReRAM Crossbars
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS), 2019Existing capabilities of computing devices are unable to match the growing demands of modern computing tasks such as multimedia processing, artificial intelligence, pattern matching, and data mining etc. Towards this end, advancements have been made in approximate hardware and software designs for such error tolerant, soft applications.
Amad Ul Hassen, Salman Anwar Khokhar
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Three dimensional integration of ReRAMs
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data. 3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory.
Boris Hudec +4 more
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On the properties of conducting filament in ReRAM
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO 2 , the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths.
Xiaojuan Lian +4 more
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A Simple Memristor Model for Neuromorphic ReRAM Devices
2020 IEEE International Symposium on Circuits and Systems (ISCAS), 2020Most of the previous investigations are dealing with the derivation of memristor models in voltage-current V-I domain. Recently, the flux-charge O — Q approach has been introduced by F. Corinto et al. [1] showing the capability to simulate the behaviour of a memristive device for a wide range of input signals.
Mohamad Moner Al Chawa +2 more
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Switching and reliability mechanisms for ReRAM
IEEE International Interconnect Technology Conference, 2014Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits.
Zhiqiang Wei +5 more
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