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A light-driven device for neuromorphic computing. [PDF]
Light Sci ApplNath SK.
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Influence of the Ge-Chalcogenide Active Layer on Electrical Conduction in Self-Directed Channel Memristors. [PDF]
Micromachines (Basel)Taher AA, Campbell KA.
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Chemical and Resistive Switching Properties of Elaeodendron buchananii Extract-Carboxymethyl Cellulose Composite: A Potential Active Layer for Biodegradable Memory Devices. [PDF]
Polymers (Basel)Dlamini ZW +13 more
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ReRAM: History, Status, and Future
IEEE Transactions on Electron Devices, 2020This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various
YangYin Chen
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Tiered-ReRAM: A Low Latency and Energy Efficient TLC Crossbar ReRAM Architecture
2019 35th Symposium on Mass Storage Systems and Technologies (MSST), 2019Resistive Memory (ReRAM) is promising to be used as high density storage-class memory by employing Triple-Level Cell (TLC) and crossbar structures. However, TLC crossbar ReRAM suffers from high write latency and energy due to the IR drop issue and the iterative program-and-verify procedure.
Yang Zhang 0051 +5 more
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ReRAM-Sharing: Fine-Grained Weight Sharing for ReRAM-Based Deep Neural Network Accelerator
2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021Deep Neural Networks (DNNs) have gained a strong momentum across various applications in recent years. Meanwhile, they are compute- and memory-intensive as the deep layers induce massive matrix-multiplication operations. The Resistive Random Access Memory (ReRAM) can naturally carry out the matrix-multiplication in memory.
Zhuoran Song +4 more
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On the origin of the fading memory effect in ReRAMs
2017 27th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS), 2017Redox-based resistive switching devices can be switched between a high resistance state and a low resistance state in a reversible manner. An important requirement is the stable operation between these two states for a high amount of switching cycles.
S. Menzel +7 more
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