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Operating Temperature Based Vulnerabilities in ReRAM
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS), 2019Resistive Random-Access Memory (ReRAM) devices have caught significant research attention as scalable non-volatile memory (NVM) technology for high-density data storage in 3-D crossbar architectures. ReRAM devices can switch with low programming voltages (
Thomas Schultz 0004, Rashmi Jha
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Three dimensional integration of ReRAMs
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data. 3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory.
Boris Hudec +4 more
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On the properties of conducting filament in ReRAM
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO 2 , the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths.
Xiaojuan Lian +4 more
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ECS Meeting Abstracts, 2016
We demonstrate a silicon oxide redox-based resistive RAM (ReRAM) device. The resistance switching in our devices is intrinsic to changes within the oxide layer and thus it is not an effect of diffusion of metallic ions from the metallic electrode as in the case of electrochemical metallization (ECM) cells.
Adnan Mehonic +7 more
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We demonstrate a silicon oxide redox-based resistive RAM (ReRAM) device. The resistance switching in our devices is intrinsic to changes within the oxide layer and thus it is not an effect of diffusion of metallic ions from the metallic electrode as in the case of electrochemical metallization (ECM) cells.
Adnan Mehonic +7 more
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Switching and reliability mechanisms for ReRAM
IEEE International Interconnect Technology Conference, 2014Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and outlier bits.
Zhiqiang Wei +5 more
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CoDG-ReRAM: An Algorithm-Hardware Co-design to Accelerate Semi-Structured GNNs on ReRAM
2022 IEEE 40th International Conference on Computer Design (ICCD), 2022Yixuan Luo +10 more
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AmgR: Algebraic Multigrid Accelerated on ReRAM
2023 60th ACM/IEEE Design Automation Conference (DAC), 2023Mingjia Fan +8 more
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Reram Technologies: Applications and Outlook
2017 IEEE International Memory Workshop (IMW), 2017We commercialized ReRAM embedded MCU in 2013 using 0.18μm process. And we have achieved 1.2M endurance at 512KB ReRAM. To realize highly reliable ReRAM, the optimization of conductive filament (CF) characteristics is important. For the optimization, we developed a methodology for quantitating the CF characteristics.
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A Fully Passive Selectorless ReRAM Array
2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS), 2023Abdulaziz Alshaya +3 more
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Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures
Russian Microelectronics, 2023Alexander Rogozhin
exaly