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Photo-activated digital resistive switching in a cryogenic photomemory. [PDF]
Wang J +13 more
europepmc +1 more source
Charge-Trapping-Enhanced Resistive Switching and Charge Storage in Silk Fibroin-TiO<sub>2</sub> Composite Memristors. [PDF]
Song S +6 more
europepmc +1 more source
Te/Fe<sub>3</sub>GaTe<sub>2</sub> 1D-2D Ferroelectric Heterojunction Transistors Enabling Ultrafast Multi-State Switching for Workpiece Surface Defect Inspection. [PDF]
Wang S +6 more
europepmc +1 more source
Resistive Switching Memory Devices Based on Proteins
Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and ...
Bowen Zhu, Hong Wang, Yaqing Liu
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2023
The centuries-old neocolonial relationship between the United States and Latin America is marked by acts of silencing, either directly in the hands of U.S. foreign affairs organizations or by proxy governments economically supported by the United States.
openaire +2 more sources
The centuries-old neocolonial relationship between the United States and Latin America is marked by acts of silencing, either directly in the hands of U.S. foreign affairs organizations or by proxy governments economically supported by the United States.
openaire +2 more sources
Reconfigurable in-memory computing with resistive memory crossbar
Proceedings of the 35th International Conference on Computer-Aided Design, 2016Driven by recent advances in resistive random-access memory (RRAM), there have been growing interests in exploring alternative computing concept, i.e., in-memory processing, to address the classical von Neumann bottlenecks. Despite of their great promise in improving performance and energy efficiency, most existing works are built on the inherent ...
Yue Zha, Jing Li 0073
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A Light-Controlled Resistive Switching Memory
Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied.
Federico Golmar +2 more
exaly +4 more sources
Scaling limits of resistive memories
Nanotechnology, 2011This paper is intended to provide an expository, physics-based, framework for the estimation of the performance potential and physical scaling limits of resistive memory. The approach taken seeks to provide physical insights into those parameters and physical effects that define device performance and scaling properties.
Victor V, Zhirnov +3 more
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Inspection-Resistant Memory Architectures
IEEE Micro, 2013The ability to safely keep a secret in memory is central to the vast majority of security schemes, but storing and erasing these secrets is a difficult problem in the face of an attacker who can obtain unrestricted physical access to the underlying hardware.
Jonathan Kaveh Valamehr +6 more
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Oxide Heterostructure Resistive Memory
Nano Letters, 2013Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on ...
Yuchao, Yang, ShinHyun, Choi, Wei, Lu
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