Results 261 to 270 of about 2,435,327 (343)

Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor. [PDF]

Adv Sci (Weinh)
Rashid MU, Safder U, Khan SA, Pham AT, Sheeraz M, Dang NH, Thanh DL, Tahir Z, Maqbool F, Chung KH, Cho S, Kim J, Kim YS.   +12 more
europepmc   +1 more source

Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching. [PDF]

ACS Omega
Nam J, Jeong J, Lee S, Kim Y, Jeon W.
europepmc   +1 more source

Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM. [PDF]

Sci Rep
Moazzeni A, Riyahi Madvar H, Hamedi S, Kordrostami Z.   +3 more
europepmc   +1 more source

Tunable Hydrogen Dynamics Under Electrical Bias for Neuromorphic Memory Applications. [PDF]

ACS Appl Mater Interfaces
Noh HY, Lee CK, G R H, Lee S, Lee MJ, Woo J, Lee HJ.   +6 more
europepmc   +1 more source

Atomistic Origin of RTN-like Centers Created and Annihilated by RRAM Write Processes. [PDF]

Nano Lett
Solomon P, Kaniselvan M, Miyazoe H, Khan B, Ando T, Luisier M.   +5 more
europepmc   +1 more source

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High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure

Advanced Materials, 2019
Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random‐access memory and the long retention time of flash memories.
Keehoon Kang, Heebeom Ahn, Younggul Song   +2 more
exaly   +2 more sources

Resistive memory switching of transition-metal complexes controlled by ligand design

Coordination Chemistry Reviews, 2019
Transition-metal complexes (TMCs) have recently attracted considerable scientific interest for resistive memory switching. The interplay between metal ions and ligand endows TMCs with rich and tunable electrochemical and photophysical properties, making ...
Jiang-Yang Shao, Bin-Bin Cui, Jian-Hong Tang   +2 more
exaly   +2 more sources

Ti3C2-Based MXene Oxide Nanosheets for Resistive Memory and Synaptic Learning Applications.

ACS Applied Materials and Interfaces, 2021
MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties.
Atul C Khot, T. Dongale, Ju Hyun Park, A. Kesavan, Tae Geun Kim   +4 more
semanticscholar   +1 more source

Invited Tutorial: Analog Matrix Computing With Crosspoint Resistive Memory Arrays

IEEE Transactions on Circuits and Systems - II - Express Briefs, 2022
Matrix computation is ubiquitous in modern scientific and engineering fields. Due to the high computational complexity in conventional digital computers, matrix computation represents a heavy workload in many data-intensive applications, e.g., machine ...
Zhong Sun, D. Ielmini
semanticscholar   +1 more source

Perovskite Resistive Memory

Multifunctional Organic-Inorganic Halide Perovskite, 2022
Bohee Hwang, Youngjun Park, Jang-Sik Lee
openaire   +2 more sources