Results 271 to 280 of about 2,435,327 (343)

Single Crystal Halide Perovskite Nonlinear Resistive Memory with Ultrahigh Switching Ratio.

Small, 2021
Morre's law is coming to an end only if the memory industry can keep stuffing the devices with new functionality. Halide perovskite acts as a promising candidate for application in next-generation nonvolatile memory. As is well known, the switching ratio
Lutao Li, Yuan Chen, Changming Cai, Peipei Ma, H. Ji, Guifu Zou   +5 more
semanticscholar   +1 more source

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Advanced Functional Materials, 2022
Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low‐cost fabrication, and good photoelectric regulation performance.
Xiaomin Liu, S. Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jin-jin Zhao   +8 more
semanticscholar   +1 more source

Memory and Resistance

2023
The centuries-old neocolonial relationship between the United States and Latin America is marked by acts of silencing, either directly in the hands of U.S. foreign affairs organizations or by proxy governments economically supported by the United States.
openaire   +2 more sources

Reconfigurable in-memory computing with resistive memory crossbar

Proceedings of the 35th International Conference on Computer-Aided Design, 2016
Driven by recent advances in resistive random-access memory (RRAM), there have been growing interests in exploring alternative computing concept, i.e., in-memory processing, to address the classical von Neumann bottlenecks. Despite of their great promise in improving performance and energy efficiency, most existing works are built on the inherent ...
Yue Zha, Jing Li 0073
openaire   +1 more source

Scaling limits of resistive memories

Nanotechnology, 2011
This paper is intended to provide an expository, physics-based, framework for the estimation of the performance potential and physical scaling limits of resistive memory. The approach taken seeks to provide physical insights into those parameters and physical effects that define device performance and scaling properties.
Victor V, Zhirnov, Roy, Meade, Ralph K, Cavin, Gurtej, Sandhu   +3 more
openaire   +2 more sources

Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure.

ACS Nano
Integration of resistive switching and rectification functions in a single memory device is promising for high writing/readout accuracy with a simplified device architecture, but the realization remains challenging, especially with a low voltage ...
Jeonghyeon Son, Minsub Lee, Arindam Sannyal, Hojun Yun, Jaehui Cheon, Sumin Lee, J. S. Park, S. Kang, Joonkyung Jang, Beomjin Jeong   +9 more
semanticscholar   +1 more source

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

Advances in Materials
The Si‐based integrated circuits industry has been developing for more than half a century, by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material ...
Xiao-Dong Li, Nian‐Ke Chen, Bai-Qian Wang, Meng Niu, Ming Xu, Xiangshui Miao, Xianbin Li   +6 more
semanticscholar   +1 more source

Photoresponsive Dithienylethene-Containing Tris(8-hydroxyquinolinato)aluminum(III) Complexes with Photocontrollable Electron-Transporting Properties for Solution-Processable Optical and Organic Resistive Memory Devices.

Journal of the American Chemical Society, 2020
The rational design of a new class of photoresponsive tris(8-hydroxyquinolinato)aluminum(III) (Alq3) complexes has been developed. By incorporating the photochromic dithienylethene units with different peripheral heterocycles into the Alq3 framework, the
Cheok-Lam Wong, M. Ng, Eugene Yau-Hin Hong, Yi-Chun Wong, M. Chan, V. Yam   +5 more
semanticscholar   +1 more source

Inspection-Resistant Memory Architectures

IEEE Micro, 2013
The ability to safely keep a secret in memory is central to the vast majority of security schemes, but storing and erasing these secrets is a difficult problem in the face of an attacker who can obtain unrestricted physical access to the underlying hardware.
Jonathan Kaveh Valamehr, Melissa Chase, Seny Kamara, Andrew Putnam, Daniel Shumow, Vinod Vaikuntanathan, Timothy Sherwood   +6 more
openaire   +1 more source

In-memory Learning with Analog Resistive Switching Memory: A Review and Perspective

Proceedings of the IEEE, 2021
In this article, we review the existing analog resistive switching memory (RSM) devices and their hardware technologies for in-memory learning, as well as their challenges and prospects.
Yue Xi, B. Gao, Jianshi Tang, An Chen, Meng-Fan Chang, X. Hu, J. Spiegel, He Qian, Huaqiang Wu   +8 more
semanticscholar   +1 more source