Results 281 to 290 of about 2,435,327 (343)
Some of the next articles are maybe not open access.
In-memory computing with resistive switching devices
Nature Electronics, 2018Modern computers are based on the von Neumann architecture in which computation and storage are physically separated: data are fetched from the memory unit, shuttled to the processing unit (where computation takes place) and then shuttled back to the ...
D. Ielmini, H. Wong
semanticscholar +1 more source
A Robust Nonvolatile Resistive Memory Device Based on a Freestanding Ultrathin 2D Imine Polymer Film
Advances in Materials, 2019Here, the synthesis of a wafer‐scale ultrathin 2D imine polymer (2DP) film with controllable thickness from simple benzene‐1,3,5‐tricarbaldehyde (BTA) and p‐phenylenediamine (PDA) building blocks is reported using a Schiff base polycondensation reaction ...
Jie Liu +6 more
semanticscholar +1 more source
Logic Synthesis for In-memory Computing Using Resistive Memories
2018 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 2018The increasing urge to bypass the issue of the memory bottleneck in the current computer architectures has attracted high attention to in-memory computing enabled by emerging memory technologies such as Resistive Random Access Memory (RRAM). This paper studies in-memory computing from two perspectives, i.e. customized and instruction-based.
Saeideh Shirinzadeh, Rolf Drechsler
openaire +1 more source
Characteristic investigation of highly oriented Hf0.5Zr0.5O2 thin-film resistive memory devices
, 2020In this work, characteristics of highly oriented Hf0.5Zr0.5O2 (HZO) thin-film resistive memory devices are investigated. The x-ray diffraction analysis indicates that the (−111) plane is the preferred orientation of HZO films, which is consistent with ...
Xiaobing Yan, Zuoao Xiao, Chao Lu
semanticscholar +1 more source
Halide Perovskites for Resistive Switching Memory.
Journal of Physical Chemistry Letters, 2021Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von ...
Kaijin Kang, Wei Hu, Xiaosheng Tang
semanticscholar +1 more source
Memeingful memories and the art of resistance
New Media & Society, 2018This article explores the rhetorical function of Internet memes as memory actants. It contributes to an ongoing conversation about the ways in which digital communication has transformed the relationship between media, memory, and the archive by disrupting predicable “decay times” and emphasizing memory as a “connective” process rather than a ...
openaire +1 more source
Detection and Coding Schemes for Sneak-Path Interference in Resistive Memory Arrays
IEEE Transactions on Communications, 2019Resistive memory is a promising technology for achieving unprecedented storage densities and new in-memory computing features. However, to fulfill their promise, resistive memories require array architectures suffering from a severe interference effect ...
Yuval Ben-Hur, Yuval Cassuto
semanticscholar +1 more source
Memory as Resistance, and the Telling of a Dream
Journal of the American Psychoanalytic Association, 1992Traditional analytic orientation to memory as subject to repression has overshadowed examination of some of the ego's other activities bearing on memory. The author examines the defensive use of memory with the analytic goal of maximum autonomous access for the patient to the ego's previously unconscious management of intrapsychic conflict.
openaire +2 more sources
Flexible, multilevel, and low-operating-voltage resistive memory based on MoS2–rGO hybrid
Applications of Surface Science, 2019With the growing demand for wearable electronic devices in recent years, flexible memory devices have attracted great interest among researchers. Here we report a flexible resistive memory device based on a hybrid of MoS2 and reduced graphene oxide (rGO).
Liqian Wu +6 more
semanticscholar +1 more source
Applications of Surface Science, 2019
Uniformity of memory switching parameters is a critical issue in the application of resistance random access memory (RRAM). Herein, we report a resistive memory device based on a NiO layer pre-treated with an ionic liquid (IL) under positive voltage ...
Xin Kang +5 more
semanticscholar +1 more source
Uniformity of memory switching parameters is a critical issue in the application of resistance random access memory (RRAM). Herein, we report a resistive memory device based on a NiO layer pre-treated with an ionic liquid (IL) under positive voltage ...
Xin Kang +5 more
semanticscholar +1 more source