Results 41 to 50 of about 2,435,327 (343)
Nanoscale resistive switching memory devices: a review
, 2022 In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms.
Slesazeck, Stefan, Mikolajick, Thomas
core +1 more source
Locally rewritable codes for resistive memories [PDF]
2016 IEEE International Conference on Communications (ICC), 2016 We propose locally rewritable codes (LWC) for resistive memories inspired by locally repairable codes (LRC) for distributed storage systems. Small values of repair locality of LRC enable fast repair of a single failed node since the lost data in the failed node can be recovered by accessing only a small fraction of other nodes.
Yongjune Kim 0001 +6 more
openaire +2 more sources
In Memory Energy Application for Resistive Random Access Memory
Advanced Electronic Materials, 2021 AbstractThis work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next‐generation memory, thanks to its promising performances in terms of scalability and CMOS process ...
Trotti, Paola +5 more
openaire +2 more sources
Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
AIP Advances, 2017 Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching ...
Zijin Wu +7 more
doaj +1 more source
Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching
Advances in Materials, 2020 Digital computing is nearing its physical limits as computing needs and energy consumption rapidly increase. Analogue‐memory‐based neuromorphic computing can be orders of magnitude more energy efficient at data‐intensive tasks like deep neural networks ...
Yiyang Li +10 more
semanticscholar +1 more source
HfO2-based resistive switching memory devices for neuromorphic computing
Neuromorph. Comput. Eng., 2022 HfO2-based resistive switching memory (RRAM) combines several outstanding properties, such as high scalability, fast switching speed, low power, compatibility with complementary metal-oxide-semiconductor technology, with possible high-density or three ...
S. Brivio, Sabina Spiga, D. Ielmini
semanticscholar +1 more source
Advanced Intelligent Systems, 2022 Nonvolatile resistive switching memristance devices with a high on/off ratio are desirable for nanoelectronics such as resistive random‐access memory (RRAM) and in‐memory computing. Here, bipolar resistive switching in point‐contacted W/LaAlO3/SrTiO3(111)
Xin Gan +7 more
doaj +1 more source
Radical History Review, 2019 Abstract Joseph DeLappe is a visual artist and activist. Images and texts in this feature detail a diversity of creative projects and actions that challenge and question our contemporary militaristic context. These works explore the intersections of art, technology, social engagement, and interventionist strategies. The included projects
openaire +1 more source
Advanced Electronic Materials, 2018 Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang +5 more
doaj +1 more source
Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device
Materials Research Express, 2021 In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj +1 more source