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Resistance switching memories are memristors [PDF]
Applied Physics A, 2011 All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive “fingerprint” characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v–i plane whose contour shape in general changes with ...
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Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices
AIP Advances, 2017 Resistive memory technology is very promising in the field of semiconductor memory devices. According to Liu et al, MoS2-PVP nanocomposite can be used as an active layer material for resistive memory devices due to its bipolar resistive switching ...
Zijin Wu +7 more
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In-Memory Computing with Resistive Memory Circuits: Status and Outlook [PDF]
Electronics, 2021 In-memory computing (IMC) refers to non-von Neumann architectures where data are processed in situ within the memory by taking advantage of physical laws. Among the memory devices that have been considered for IMC, the resistive switching memory (RRAM), also known as memristor, is one of the most promising technologies due to its relatively easy ...
Pedretti G., Ielmini D.
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Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices [PDF]
Archives of Metallurgy and MaterialsSelf-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell.
Min Gyoo Cho +2 more
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Scientific Reports, 2021 TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices.
Sera Kwon, Min-Jung Kim, Kwun-Bum Chung
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An All‐Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory
Advanced Electronic Materials, 2018 A rapid surge in the research of lightweight, invisible, and flexible electronics is occurring with the arrival of Internet of Things (IoT). However, multifunctional perovskite oxide electronics are commonly hard and should be synthesized at high ...
Yuxi Yang +5 more
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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Nanoscale Research Letters, 2019 Resistive random-access memory devices with atomic layer deposition HfO2 and radio frequency sputtering TiOx as resistive switching layers were fabricated successfully. Low-power characteristic with 1.52 μW set power (1 μA@1.52 V) and 1.12 μW reset power
Xiangxiang Ding +4 more
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AIP Advances, 2020 Resistive random-access memory plays a key role in non-volatile and neuromorphic artificial electronic devices. In this work, we fabricated Ta/TaOx/AlN/Pt resistive memory devices with the inserted AlN layer to improve the performance.
Gang Cao +5 more
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Process integration and logic applications of SiOx based resistive memory [PDF]
, 2016 Flash memory has been the fastest growing non-volatile memory technology, and it has been widely used in many portable electronic products. Due to its charge based memory mechanism, there are more and more challenges scaling down the flash memory device.
Zhou, Fei, 1984-
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Low-power resistive random access memory by confining the formation of conducting filaments
AIP Advances, 2016 Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics.
Yi-Jen Huang +4 more
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