Results 11 to 20 of about 2,052,774 (301)
Bayesian In-Memory Computing with Resistive Memories
2023 International Electron Devices Meeting (IEDM), 2023 This paper explores three approaches using resistive memory for Bayesian near-memory and in-memory computing, leveraging their inherent randomness. The strategies include Bayesian machines for efficient near-memory computing, Bayesian neural networks exploiting randomness of synapses, and Bayesian learning utilizing the Metropolis-Hastings Markov Chain
Turck, C +15 more
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In Memory Energy Application for Resistive Random Access Memory
Advanced Electronic Materials, 2021 AbstractThis work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as next‐generation memory, thanks to its promising performances in terms of scalability and CMOS process ...
Trotti, Paola +5 more
openaire +3 more sources
Variability in Resistive Memories
Advanced Intelligent Systems, 2023 Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial ...
Juan Bautista Roldán +19 more
openaire +8 more sources
Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell
Molecules, 2023 A facile sol–gel spin coating method has been proposed for the synthesis of spin-coated ZnO nanofilms on ITO substrates. The as-prepared ZnO-nanofilm-based W/ZnO/ITO memory cell showed forming-free and tunable nonvolatile multilevel resistive switching ...
Zhiqiang Yu +8 more
doaj +1 more source
Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
Nanomaterials, 2021 Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device
Harshada Patil +6 more
doaj +1 more source
Results in Physics, 2019 With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li +8 more
doaj +1 more source
Stateful Logic Using Phase Change Memory
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 Stateful logic is a digital processing-in-memory (PIM) technique that could address von Neumann memory bottleneck challenges while maintaining backward compatibility with standard von Neumann architectures.
Barak Hoffer +5 more
doaj +1 more source
Recent advances in organic‐based materials for resistive memory applications
InfoMat, 2020 With the rapid development of data‐driven human interaction, advanced data‐storage technologies with lower power consumption, larger storage capacity, faster switching speed, and higher integration density have become the goals of future memory ...
Yang Li +9 more
doaj +1 more source
Modeling the Impact of Process Variation on Resistive Bridge Defects [PDF]
, 2010 Recent research has shown that tests generated without taking process variation into account may lead to loss of test quality. At present there is no efficient device-level modeling technique that models the effect of process variation on resistive ...
Robert Aitken +9 more
core +2 more sources
Current–time characteristics of resistive superconducting fault current limiters [PDF]
, 2012 Superconducting fault current limiters (SFCLs) may play an important role in power-dense electrical systems. Therefore, it is important to understand the dynamic characteristics of SFCLs.
Burt, Graeme +2 more
core +4 more sources