Results 11 to 20 of about 2,435,327 (343)

Experimental Demonstration of Multilevel Resistive Random Access Memory Programming for up to Two Months Stable Neural Networks Inference Accuracy

Advanced Intelligent Systems, 2022
Crossbars of resistive memories, or memristors, provide a road to reduce the energy consumption of artificial neural networks, by naturally implementing multiply accumulate operations, their most basic calculations.
Eduardo Esmanhotto, Tifenn Hirtzlin, Djohan Bonnet, Niccolo Castellani, Jean-Michel Portal, Damien Querlioz, Elisa Vianello   +6 more
doaj   +2 more sources

Bayesian In-Memory Computing with Resistive Memories

2023 International Electron Devices Meeting (IEDM), 2023
This paper explores three approaches using resistive memory for Bayesian near-memory and in-memory computing, leveraging their inherent randomness. The strategies include Bayesian machines for efficient near-memory computing, Bayesian neural networks exploiting randomness of synapses, and Bayesian learning utilizing the Metropolis-Hastings Markov Chain
Turck, C, Bonnet, D, Harabi, K-E, Dalgaty, T, Ballet, T, Hirtzlin, T, Pontlevy, A, Renaudineau, A, Esmanhotto, E, Bessière, P, Droulez, J, Laurent, R, Bocquet, Marc, Portal, J., Vianello, E., Querlioz, D   +15 more
openaire   +2 more sources

Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices [PDF]

Nanomaterials, 2022
Among the different graphene derivatives, graphene oxide is the most intensively studied material as it exhibits reliable and repeatable resistive switching.
Sergei Koveshnikov, Oleg Kononenko, Oleg Soltanovich, Olesya Kapitanova, Maxim Knyazev, Vladimir Volkov, Eugene Yakimov   +6 more
doaj   +2 more sources

Direct measurement of nanoscale filamentary hot spots in resistive memory devices. [PDF]

Sci Adv, 2022
Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormous ...
Deshmukh S, Rojo MM, Yalon E, Vaziri S, Koroglu C, Islam R, Iglesias RA, Saraswat K, Pop E.   +8 more
europepmc   +2 more sources

Molecular Design Toward High‐Performance Solution‐Processable Push–Pull Zinc(II) Porphyrin‐Based Resistive Memory Devices: From Binary to Ternary Memory Behavior [PDF]

Small Science
A series of zinc(II) porphyrin‐based donor−acceptor (D–A) decorated complexes has been designed, synthesized, characterized, and employed to fabricate solution‐processable resistive memory devices.
Ka Wai Kwong, Hing Chan, Ming‐Yi Leung, Eugene Yau‐Hin Hong, Shiu‐Lun Lai, Vivian Wing‐Wah Yam   +5 more
doaj   +2 more sources

Digital Biologically Plausible Implementation of Binarized Neural Networks With Differential Hafnium Oxide Resistive Memory Arrays. [PDF]

Front Neurosci, 2019
The brain performs intelligent tasks with extremely low energy consumption. This work takes its inspiration from two strategies used by the brain to achieve this energy efficiency: the absence of separation between computing and memory functions and ...
Hirtzlin T, Bocquet M, Penkovsky B, Klein JO, Nowak E, Vianello E, Portal JM, Querlioz D.   +7 more
europepmc   +3 more sources

A Light‐Controlled Resistive Switching Memory

Advanced Materials, 2012
Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied.
Mariana Ungureanu, Raúl Zazpe, F Golmar   +2 more
exaly   +4 more sources

Oxide Heterostructure Resistive Memory

Nano Letters, 2013
Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on ...
Yuchao, Yang, ShinHyun, Choi, Wei, Lu
openaire   +3 more sources

Quantum Dots for Resistive Switching Memory and Artificial Synapse

Nanomaterials
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von Neumann bottleneck.
Gyeongpyo Kim, Seoyoung Park, Sungjun Kim   +2 more
doaj   +2 more sources

Variability in Resistive Memories

Advanced Intelligent Systems, 2023
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance have been notably improved in the last few years to cope with the requirements of massive industrial ...
Juan Bautista Roldán, Enrique Miranda 0002, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua   +19 more
openaire   +7 more sources