Results 121 to 130 of about 1,751 (142)

Coupling Light into Memristors: Advances in Halide Perovskite Resistive Switching and Neuromorphic Computing. [PDF]

Small Methods
Feng Z, Wang J, Chen F, Dong B, Ma X, Mei T, Yang N, Guan X, Hu L, Lin CH, Li Z, Wu T, Chu D.   +12 more
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Hysteresis in memristors produces conduction inductance and conduction capacitance effects.

Phys Chem Chem Phys
Bisquert J, Roldán JB, Miranda E.
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Experimental Set-Up For Novel Energy Efficient Charge-based Resistive RAM (RRAM) Switching

2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), 2020
This work explores a new method to reduce the energy consumption during the writing of process-spread resistive-based memories (RRAM), based on setting an initial electrical charge into a writing capacitor rather than applying constant voltage over a fixed time.
Trotti, P., Pillonet, G., Molas, G., Oukassi, S., Nowak, E.   +4 more
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High Speed Unipolar Switching Resistance RAM (RRAM) Technology

2006 International Electron Devices Meeting, 2006
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds.
Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Akoh, Y. Tokura   +15 more
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Fast-Write Resistive RAM (RRAM) for Embedded Applications

IEEE Design & Test of Computers, 2011
Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.
null Shyh-Shyuan Sheu, null Kuo-Hsing Cheng, null Meng-Fan Chang, null Pei-Chia Chiang, null Wen-Pin Lin, null Heng-Yuan Lee, null Pang-Shiu Chen, null Yu-Sheng Chen, null Tai-Yuan Wu, Frederick T Chen, null Keng-Li Su, null Ming-Jer Kao, null Ming-Jinn Tsai   +12 more
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Mechanisms and performance of metal oxide resistive RAM (RRAM)

2013 IEEE International Integrated Reliability Workshop Final Report, 2013
Resistive RAM (RRAM) has emerged as a promising nonvolatile memory solution. Significant progress has been made on RRAM fabrication and characterization, as well as the understanding of the physical mechanisms. There are large varieties of RRAM materials and devices. However, some common characteristics have been observed in these devices, which can be
An Chen, Matteo Meneghini, Daniel Van Blerkom, Franz Schanovsky, Tom Shaw   +4 more
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Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications

2008 8th IEEE Conference on Nanotechnology, 2008
We present a fast and flexible method for the fabrication of nano-crossbar arrays with a feature size of 100 nm. TiO2 is integrated and electrically characterized as the nonvolatile resistively switching material. This structure serves as a key component for the investigation of novel high density nonvolatile resistive RAM cores.
C. Nauenheim, C. Kugeler, A. Rudiger, R. Waser, A. Flocke, T. G. Noll   +5 more
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Effects of boron doping on resistance switching of graphene-oxide (GO) resistive RAM (RRAM)

2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016
This work investigates the effects of GO RRAM w/ and w/o boron doping, and the effects of thermal annealing. From the experiment results, the B-doped GO RRAM annealed at 350°C shows the best performance with a higher resistance ratio of 4.15 orders and a higher dc switching cycles of 1300.
Cheng-Li Lin, Ke-Yu Hung, Tse-Wen Wang, Jian-Dong Lee, Yu -Jiun Lu   +4 more
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Functionality and reliability of resistive RAM (RRAM) for non-volatile memory applications

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016
Various RRAM concepts are currently being investigated (Oxide based RAM, Conductive Bridge RAM), all showing pros and cons depending on the architecture and memory stack. As the specifications are strongly application-dependent, it is likely that the RRAM technology will be bound to a specific market segment.
G. Molas, G. Piccolboni, M. Barci, B. Traore, J. Guy, G. Palma, E. Vianello, P. Blaise, J. M. Portal, M. Bocquet, A. Levisse, B. Giraud, J. P. Noel, M. Harrand, M. Bernard, A. Roule, B. De Salvo, L. Perniola   +17 more
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