Results 131 to 140 of about 1,751 (142)

Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells

Journal of Electronic Materials, 2014
We present a study of Ni silicide as the bottom electrode in HfO2-based resistive random-access memory cells. Various silicidation conditions were used for each device, yielding different Ni concentrations within the electrode. A higher concentration of Ni in the bottom electrode was found to cause a parasitic SET operation during certain RESET ...
Z.X. Chen, Z. Fang, Y. Wang, Y. Yang, A. Kamath, X.P. Wang, N. Singh, G.-Q. Lo, D.-L. Kwong, Y.H. Wu   +9 more
openaire   +1 more source

Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM)

Microelectronic Engineering, 2015
Display Omitted Effect of oxygen content on electrical performance of ZnO RRAM.Demonstrate the optimal oxygen content in ZnO film for RRAM application.Propose the resistance switching model of ZnO RRAM at different oxygen content. This study investigates the characteristics of zinc oxide (ZnO) film in a resistive random-access memory (RAM) (RRAM) with ...
Cheng-Li Lin, Chi-Chang Tang, Shu-Ching Wu, Pi-Chun Juan, Tsung-Kuei Kang   +4 more
openaire   +1 more source

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

2013 IEEE International Electron Devices Meeting, 2013
We report a novel self-compliant and self-rectifying resistive switching memory cell, with area-scalable switching currents, featuring a set current density of ~5nA/nm2 ( 102 and retention extrapolates to 10yr at 101°C. The switching stack is fully based on ALD processes, using common high-k dielectrics and has a thickness of
B. Govoreanu, A. Redolfi, L. Zhang, C. Adelmann, M. Popovici, S. Clima, H. Hody, V. Paraschiv, I.P. Radu, A. Franquet, J.-C. Liu, J. Swerts, O. Richard, H. Bender, L. Altimime, M. Jurczak   +15 more
openaire   +1 more source

High Speed Unipolar Switching with Very Low Reset Current Resistance RAM (RRAM) for Non-Volatile Memory Application

ECS Meeting Abstracts, 2008
Abstract not Available.
Seung-eon Ahn, Myoung-Jae Lee, Bo Soo Kang, Ki Hwan Kim, Chang Bum Lee, Yongsoo Park, Genrikh Stefanovich   +6 more
openaire   +1 more source

Emerging Memory Technologies: A Systematic Literature Review with Focus on Resistive RAM (RRAM) and Phase-Change Memory (PCM)

2022
Abstract This systematic literature review navigates the ever-evolving realm of emerging memory technologies, with a specific focus on Resistive RAM (RRAM) and Phase-Change Memory (PCM). The review undertakes a meticulous and comprehensive exploration of these technologies, unraveling their current state, advancements, challenges, and future ...
openaire   +1 more source

Unipolar Memory Operation of Resistance RAM (RRAM) using Compliance Current Controller

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
M. Kim, B. Park, O. Kim
openaire   +1 more source

Resistance Switching Behavior of ZnO Resistive RAM (RRAM) with a Reduced Graphene Oxide capping layer

Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, 2014
C.L. Lin, W.Y. Chang, Y.L. Huang, T.W. Wang, K.Y. Hung   +4 more
openaire   +1 more source

Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC

16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), 2011
Meng-Fan Chang, Pi-Feng Chiu, Shyh-Shyuan Sheu   +2 more
openaire   +1 more source

Uniformity Improvement of Resistance State by Using Novel Electrical Operation for the Flexible AlN Unipolar Resistive RAM (RRAM)

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2013
C.L. Lin, C.M. Wu, Y.H. Yang, C.H. Soh, W.Y. Chang, Y.L. Huang, P.C. Juan   +6 more
openaire   +1 more source

Multi-Level Switching Characteristics for WO_X Resistive RAM (RRAM)

Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials, 2008
W. C. Chien, K. P. Chang, Y. C. Chen, E. K. Lai, H. Mähne, Y. D. Yao, P. Lin, J. Gong, S. H. Hsieh, K. Y. Hsieh, R. Liu, C. Y. Lu   +11 more
openaire   +1 more source