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Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO<sub>2</sub>-Based Oxide RRAM and Conductive-Bridge RAM Devices

IEEE Electron Device Letters, 2015
Tsung-Ling Tsai   +3 more
openaire   +1 more source

The Impact of Bending and Light Exposure on the Resistive Switching Characteristics of Transparent Flexible ITO/ZnO/ITO Resistive RAM (RRAM)

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2013
C.L. Lin   +6 more
openaire   +1 more source

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