Results 251 to 260 of about 4,425 (277)

Resistance random access memory switching mechanism

Journal of Applied Physics, 2007
The properties of Pr0.7Ca0.3MnO3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Based on the experimental data it is concluded that the resistance increase is due to localization of ...
Sheng T. Hsu, Tingkai Li, Nobuyoshi Awaya   +2 more
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Operation methods of resistive random access memory

Science China Technological Sciences, 2014
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM).
GuoMing Wang, ShiBing Long, MeiYun Zhang, Yang Li, XiaoXin Xu, HongTao Liu, Ming Wang, PengXiao Sun, HaiTao Sun, Qi Liu, HangBing Lü, BaoHe Yang, Ming Liu   +12 more
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GMRAM: giant magneto-resistance random-access memory

2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484), 2002
Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used
R.R. Katti, H. Kaakani
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Novel graphene-based resistive random access memory

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced.
null Yu-Tao Li, null Hai-Ming Zhao, null He Tian, null Xue-Feng Wang, null Wen-Tian Mi, null Yi Yang, null Tian-Ling Ren   +6 more
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Halide perovskites for resistive random-access memories

Journal of Materials Chemistry C, 2019
Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.
Hyojung Kim, Ji Su Han, Sun Gil Kim, Soo Young Kim, Ho Won Jang   +4 more
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Selector Failure Detection for Resistive Random Access Memories

2021 IEEE International Symposium on Information Theory (ISIT), 2021
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays.
Guanghui Song, Kui Cai, Ce Sun, Xingwei Zhong, Jun Cheng   +4 more
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Bio-Organic Based Resistive Switching Random-Access Memory

Solid State Phenomena, 2023
A non-volatile memory is a solid-state device that can retain data even power supply is terminated. It is an essential data storage device that serves as a backbone for the advancement of Internet-of-Things. There are various emerging non-volatile memory technologies in different technology-readiness levels, to replace the existing technologies with ...
Muhammad Awais, Feng Zhao, Kuan Yew Cheong   +2 more
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NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

ACS Nano, 2010
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO(3) substrate containing terraces with a regular interval of about 100 nm and an atomically smooth surface. For the formation of the NiO RRAM nanocapacitor (Pt/NiO/graphene capacitor) array, an anodic aluminum oxide (AAO) nanotemplate with a ...
Son, JY, Shin, YH, Kim, H, Jang, HM
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Noise in Resistive Random Access Memory Devices

2020
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world.
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Optoelectronic resistive random access memory for neuromorphic vision sensors

Nature Nanotechnology, 2019
Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, memory and processing units presents serious challenges in terms of device integration and power consumption.
Feichi Zhou, Zheng Zhou, Jiewei Chen, Tsz Hin Choy, Jingli Wang, Ning Zhang, Ziyuan Lin, Shimeng Yu, Jinfeng Kang, H.-S. Philip Wong, Yang Chai   +10 more
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