Results 241 to 250 of about 6,707 (290)

Tunable Dynamics via Dual‐Ion Modulation for Event‐based Data Processing Using a Highly Uniform and Self‐Rectifying Memristor Array

Advanced Science, EarlyView.
Tunable dynamics of an interface‐type memristor array enabled by dual‐ion modulation through Ag nanoclusters are demonstrated. A 32 × 32 one‐resistor (1R) array exhibits 100% yield with high temporal/spatial uniformity (<3%) and a rectification ratio of 105.
Yoonho Cho, Dawon Kim, Jeonghong Lee, Dae‐won Kim, See‐On Park, Jongmin Bae, Taehwan Jang, Shinhyun Choi   +7 more
wiley   +1 more source

The RNA‐Binding Protein PARN Remodeled 3′ UTR Structure Defines Poly(A)‐Loading Sites to Mediate Immunoglobulin Homeostasis

Advanced Science, EarlyView.
ABSTRACT Class Switch Recombination (CSR) is essential for generating high‐affinity antibody isotypes from IgM during adaptive humoral responses. Despite well‐established roles for various transcription factors, whether CSR is subject to dedicated post‐transcriptional control represents a significant gap in knowledge.
Siyuan Sun, Chen Yang, Xiaoyu Wang, Naijing Hu, Shengyao Zhang, Xinchun Li, Yu Chen, Jianan Zhai, Xiangfeng Tang, Wei Lu, Chenxu Lu, Changchang Cao, Weiru Yu, Wenhao Wu, Xiaonan Nie, Fengchao Wang, Bing Fang, Fazheng Ren, Yixuan Li, Juan Chen   +19 more
wiley   +1 more source

Amplification of Endoplasmic Reticulum Stress via Inhibiting Lipid Droplet Formation to Enhance Chemodynamic Immunotherapy

Advanced Science, EarlyView.
An endoplasmic reticulum (ER)‐targeted chemodynamic nanoagent (TCBQ/iLD‐ER NPs) comprising •OH‐generating tetrachloro‐1,4‐benzoquinone (TCBQ) and lipid droplets (LDs) formation inhibitor (iLD) is developed for chemodynamic immunotherapy of tumors. After ingestion by cancer cells, TCBQ/iLD‐ER NPs preferentially accumulate in the ER and react with ER ...
Huilan Cai, Shaoru Zhuang, Yang Zhu, Rujiang Ao, Meili Yu, Tingting Cui, Jun Wang, Xuegang Niu, Hongwei Huang, Shanshan Peng, Yu He, Lisen Lin, Huanghao Yang   +12 more
wiley   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

BCMA‐Engineered Dendritic Cell‐Derived Exosomes as Bi‐Functional Therapeutics Orchestrating Cytokine Sequestration and Immune Activation for Multiple Myeloma

Advanced Science, EarlyView.
A dual‐function cell‐free therapeutic based on DC2.4 cell‐derived exosomes engineered to display BCMA. (Left) Soluble Ligand Sequestration (Decoy Function): DB Exo act as molecular decoys that predominantly sequester soluble APRIL with partial BAFF attenuation, effectively disrupting the NF‐κB survival signaling axis and suppressing myeloma cell ...
Yuqing Zeng, Chao He, Zhibin He, Hongbo Chen, Fang Cheng, Yongjiang Zheng   +5 more
wiley   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

IEEE Electron Device Letters, 2012
A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in
Yang Lu, Ｂing Ｃｈｅｎ, Lifeng Ｌｉｕ   +2 more
exaly   +2 more sources

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Coding for Resistive Random-Access Memory Channels

GLOBECOM 2020 - 2020 IEEE Global Communications Conference, 2020
In this paper, we propose channel coding techniques that can mitigate both the sneak-path interference and the channel noise for resistive random-access memory (ReRAM) channels. The main challenge is that the sneak-path interference is data-dependent, and also correlated within a memory array, and hence the conventional error correction coding scheme ...
Guanghui Song, Kui Cai 0001, Xingwei Zhong, Jiang Yu, Jun Cheng 0001   +4 more
openaire   +1 more source

Selector Failure Detection for Resistive Random Access Memories

2021 IEEE International Symposium on Information Theory (ISIT), 2021
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays.
Guanghui Song, Kui Cai 0001, Ce Sun, Xingwei Zhong, Jun Cheng 0001   +4 more
openaire   +1 more source

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Proceedings of the IEEE, 2010
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also
H Akinaga, Hisashi Shima
exaly   +2 more sources