Results 251 to 260 of about 6,707 (290)

Noise in Resistive Random Access Memory Devices

2020
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world.
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Halide perovskites for resistive random-access memories

Journal of Materials Chemistry C, 2019
Halide-perovskites-based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because the switching material—halide perovskite—has received considerable attention in recent years owing to its unique and exotic electrical, optical, and structural properties.
Hyojung Kim, Ji Su Han, Sun Gil Kim, Soo Young Kim, Ho Won Jang   +4 more
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Resistance random access memory switching mechanism

Journal of Applied Physics, 2007
The properties of Pr0.7Ca0.3MnO3 resistance random access memory devices have been studied in terms of electrical pulse width, pulse polarity, film thickness, resistivity distribution, temperature dependence, device impedance, and dynamics property. Based on the experimental data it is concluded that the resistance increase is due to localization of ...
Sheng T. Hsu, Tingkai Li, Nobuyoshi Awaya   +2 more
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Operation methods of resistive random access memory

Science China Technological Sciences, 2014
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), constant current stress (CCS), constant voltage stress (CVS), rectangular pulse mode (RPM), and triangle pulse mode (TPM).
GuoMing Wang, ShiBing Long, MeiYun Zhang, Yang Li, XiaoXin Xu, HongTao Liu, Ming Wang, PengXiao Sun, HaiTao Sun, Qi Liu, HangBing Lü, BaoHe Yang, Ming Liu   +12 more
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Unipolar Resistance Switching in Polymeric Resistance Random Access Memories

Japanese Journal of Applied Physics, 2009
We investigate the characteristic features of unipolar resistance switching in polymeric devices based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and demonstrate the unipolar switching cycles controlled by a series resistor. The device with a set compliance current (CC) of 10 mA and a bottom electrode thickness (tBE) of 300
Kim, M, Kim, O
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Resistive Random Access Memory for Future Information Processing System

Proceedings of the IEEE, 2017
Resistive random access memory (RRAM) is regarded as one of the most promising emerging memory technologies for next-generation embedded, standalone nonvolatile memory (NVM), and storage class memory (SCM) due to its speed, density, cost, and scalability.
Huaqiang Wu, Xiao Hu Wang, Bin Gao 0006, Ning Deng 0008, Zhichao Lu, Brent Haukness, Gary Bronner, He Qian   +7 more
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NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

ACS Nano, 2010
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO(3) substrate containing terraces with a regular interval of about 100 nm and an atomically smooth surface. For the formation of the NiO RRAM nanocapacitor (Pt/NiO/graphene capacitor) array, an anodic aluminum oxide (AAO) nanotemplate with a ...
Son, JY, Shin, YH, Kim, H, Jang, HM
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(Invited) Environmental Resistance of Resistive Random Access Memory

ECS Meeting Abstracts, 2016
Environmental resistance of memory devices must be clarified for putting them into practical use. This should be emphasized in particular for resistance random access memory (ReRAM), which switching mechanism is still unclear, because responses to environmental stresses are closely related to the mechanism.
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Optoelectronic resistive random access memory for neuromorphic vision sensors

Nature Nanotechnology, 2019
Neuromorphic visual systems have considerable potential to emulate basic functions of the human visual system even beyond the visible light region. However, the complex circuitry of artificial visual systems based on conventional image sensors, memory and processing units presents serious challenges in terms of device integration and power consumption.
Feichi Zhou, Zheng Zhou, Jiewei Chen, Tsz Hin Choy, Jingli Wang, Ning Zhang, Ziyuan Lin, Shimeng Yu, Jinfeng Kang, H.-S. Philip Wong, Yang Chai   +10 more
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Resistive Random Access Memory: A Review of Device Challenges

IETE Technical Review, 2019
With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device.
Varshita Gupta, Shagun Kapur, Sneh Saurabh, Anuj Grover   +3 more
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