Results 261 to 270 of about 6,707 (290)

GMRAM: giant magneto-resistance random-access memory

2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484), 2002
Giant Magneto-resistance Random-Access Memory (GMRAM) is a nonvolatile random access memory that uses magnetic multi-layers made of thin layers of common ferromagnetic materials to write digital data and the giant magneto-resistance (GMR) effect to read stored data. The direction of magnetization in the storage layer of the magnetic multi-layer is used
R.R. Katti, H. Kaakani
openaire   +1 more source

Switching in polymeric resistance random-access memories (RRAMS)

Organic Electronics, 2008
Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L., Benvenho, A. R. V., De Leeuw, Dago M., Cölle, M., Stallinga, Peter, Verbakel, F., Taylor, D. M.   +6 more
openaire   +3 more sources

An improved reconfigurable logic in resistive random access memory

Integration, 2022
Yi Zhao, Hui Chen, Peng Liu 0045, Jigang Wu, Dongxiang Luo   +4 more
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HReRAM: A Hybrid Reconfigurable Resistive Random-Access Memory

Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, 2015
Miguel Angel Lastras-Montaño, Amirali Ghofrani, Kwang-Ting Cheng   +2 more
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Optimizing of Resistive Random Access Memory to Increase Its Practicability.

Science and Technology of Engineering, Chemistry and Environmental Protection
The progress in Integrated Circuit Technology, has promoted the development of emerging technologies like AI and Iot. It also requires the memory technology a high standard. Resistive random-access memory (RRAM) has the advantages of lower power consumption, fast speed and owns a strong compressibility, and it is regarded as the most promising NVM in ...
openaire   +1 more source

Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory

Advanced Functional Materials, 2022
Yi Cui, Xianfu Wang, Chaobo Li
exaly  

A flexible nickel phthalocyanine resistive random access memory with multi-level data storage capability

Journal of Materials Science and Technology, 2021
Tingyu Qu, Chao Zhen, Qi Liu
exaly  

Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

Advanced Materials, 2015
Miaoqiang Lyu, Jung-Ho Yun, Young Jin Choi   +2 more
exaly  

Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory

Advanced Materials, 2018
Sung Pyo Park, Young Jun Tak, Hee Jun Kim   +2 more
exaly  

Resistive switching phenomena for resistive random access memory applications

2013
The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easily fabricated in less stringent environments.
openaire   +1 more source