Results 261 to 270 of about 4,425 (277)
Some of the next articles are maybe not open access.
Unipolar Resistance Switching in Polymeric Resistance Random Access Memories
Japanese Journal of Applied Physics, 2009We investigate the characteristic features of unipolar resistance switching in polymeric devices based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and demonstrate the unipolar switching cycles controlled by a series resistor. The device with a set compliance current (CC) of 10 mA and a bottom electrode thickness (tBE) of 300
Kim, M, Kim, O
openaire +2 more sources
Analog memory characteristics of 1T1R MoOx resistive random access memory
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoO x ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose
Mingyu Jo +6 more
openaire +1 more source
(Invited) Environmental Resistance of Resistive Random Access Memory
ECS Meeting Abstracts, 2016Environmental resistance of memory devices must be clarified for putting them into practical use. This should be emphasized in particular for resistance random access memory (ReRAM), which switching mechanism is still unclear, because responses to environmental stresses are closely related to the mechanism.
openaire +1 more source
Switching in polymeric resistance random-access memories (RRAMS)
Organic Electronics, 2008Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place.
Gomes, Henrique L. +6 more
openaire +3 more sources
Resistive random access memories with nanodiamond dielectric films
2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013), 2013We report the application of nanodiamond prepared by microwave plasma chemical deposition system as the dielectric film with copper as top electrodes and a tungsten counter electrode for the fabrication of resistive random access memory (RRAM). The RRAM is switched between the high-resistivity state and a low-resistivity state of nanodiamond film.
null Chichun Lu +2 more
openaire +1 more source
Resistive random-access memory based on ratioed memristors
Nature Electronics, 2018Resistive random-access memories made from memristor crossbar arrays could provide the next generation of non-volatile memories. However, integrating large memristor crossbar arrays is challenging due to the high power consumption that originates from leakage currents (known as the sneak-path problem) and the large device-to-device and cycle-to-cycle ...
Miguel Angel Lastras-Montaño +1 more
openaire +2 more sources
Purely electronic nanometallic resistance switching random-access memory
MRS Bulletin, 2018Abstract
Yang Lu +3 more
openaire +1 more source
Access Strategies for Resistive Random Access Memory (RRAM)
ECS Transactions, 2012In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen +14 more
openaire +1 more source