Results 111 to 120 of about 84,204 (350)

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

AIP Advances, 2019
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance ...
Chengyue Xiong, Ziyao Lu, Siqi Yin, Hongming Mou, Xiaozhong Zhang   +4 more
doaj   +1 more source

Effects of Sm₂O₃ and V₂O₅ Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals, 2019
In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance
Jian-Yang Lin, Kuang-Yao Wu, Kai-Huang Chen   +2 more
doaj   +1 more source

A mechanism for unipolar resistance switching in oxide non-volatile memory devices

, 2007
Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures.
Baek I. G., Hosoi Y., I. H. Inoue, M. J. Rozenberg, M. J. Sánchez   +4 more
core   +1 more source

Real‐World Performance of CSF Kappa Free Light Chains in the 2024 McDonald Criteria

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Kappa free light chains (KFLCs) in the cerebrospinal fluid (CSF) have a similar performance to CSF‐restricted oligoclonal bands (OCB) for multiple sclerosis (MS) diagnosis. To help with implementation, we set out to resolve several remaining uncertainties: (1) performance in a real‐world cohort and the 2024 McDonald criteria; (2 ...
Maya M. Leibowitz, Ryan Cooper, Stefania Kaninia, Kathryn I. Challis, Will Greenway, Maria Bonello, Mahmoud Elbahnasawi, Deborah T. Shode, Dominika Gajdasik, Victor Iliev, Alison M. E. Whitelegg, Ian Galea   +11 more
wiley   +1 more source

Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory

Scientific Reports, 2017
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices.
Seung-Won Yeom, Banseok You, Karam Cho, Hyun Young Jung, Junsu Park, Changhwan Shin, Byeong-Kwon Ju, Jong-Woong Kim   +7 more
doaj   +1 more source

A Robust Adaptive One‐Sample‐Ahead Preview Super‐Twisting Sliding Mode Controller

International Journal of Adaptive Control and Signal Processing, EarlyView.
Block Diagram of the Robust Adaptive One‐Sample‐Ahead Preview Super‐Twisting Sliding Mode Controller. ABSTRACT This article introduces a discrete‐time robust adaptive one‐sample‐ahead preview super‐twisting sliding mode controller. A stability analysis of the controller by Lyapunov criteria is developed to demonstrate its robustness in handling both ...
Guilherme Vieira Hollweg, Paulo Jefferson Dias de Oliveira Evald, Shivam Chaturvedi, Hilton Abilio Gründling, Rodrigo Varella Tambara, Wencong Su   +5 more
wiley   +1 more source

Resistively Switching Chalcogenides [PDF]

Advanced Functional Materials, 2015
Rainer Waser, Matthias Wuttig
openaire   +1 more source

Duplex Stainless Steel Laser‐Surface Textured: Stability in Brine Solution

Advanced Engineering Materials, EarlyView.
Controlled laser‐surface treatment (LST) of duplex DSS2205 steel is performed to increase its stability in brine solution under cyclic electrochemical assays. The superior protection with respect to flat and smooth panels is attributed to the presence of FeCr2O4 as the main protective oxide layer in the LST surface, after corrosion tests. The stability
Mohammad Rezayat, Hamidreza Enshaei, Elaine Armelin, José I. Iribarren, Antonio Mateo, Miguel Morales   +5 more
wiley   +1 more source

Resistive Switching in Nanodevices

, 2015
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized
Raebiger, Hannes, Padilha, Antonio Claudio M., Rocha, Alexandre R., Dalpian, Gustavo M.   +3 more
openaire   +2 more sources

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

Advanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source