Results 141 to 150 of about 1,933,006 (329)
Programmable ferroelectric tunnel memristor
We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling.
Andy eQuindeau +2 more
doaj +1 more source
Resistive Switching Assisted by Noise
We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio ...
A. Stotland +4 more
core +1 more source
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar +8 more
wiley +1 more source
Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang +5 more
doaj +1 more source
This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens +14 more
wiley +1 more source
Electrical switching properties of Ag2S/Cu3P under light and heat excitation
In this paper, we prepared and investigated the electrical switching behaviors of Cu3P/Ag2S heterojunction in the absence/presence of light/heat excitation. The structure exhibited bipolar memristor characteristics.
Xin Guo +5 more
doaj +1 more source
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their functionality are
Dirkmann, Sven +2 more
core +1 more source
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner +9 more
wiley +1 more source
Field-Induced Resistive Switching in Metal-Oxide Interfaces
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal ...
Baikalov, A. +8 more
core +2 more sources

