Results 141 to 150 of about 1,933,006 (329)

Programmable ferroelectric tunnel memristor

open access: yesFrontiers in Physics, 2014
We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling.
Andy eQuindeau   +2 more
doaj   +1 more source

Resistive Switching Assisted by Noise

open access: yes, 2013
We extend results by Stotland and Di Ventra on the phenomenon of resistive switching aided by noise. We further the analysis of the mechanism underlying the beneficial role of noise and study the EPIR (Electrical Pulse Induced Resistance) ratio ...
A. Stotland   +4 more
core   +1 more source

Unique Performance Considerations for Printable Organic Semiconductor and Perovskite Radiation Detectors: Toward Consensus on Best Practice Evaluation

open access: yesAdvanced Functional Materials, EarlyView.
A lack of standard approaches for testing and reporting the performance of metal halide perovskites and organic semiconductor radiation detectors has resulted in inconsistent interpretation of performance parameters, impeding progress in the field. This Perspective recommends key metrics and experimental details, which are suggested for reporting in ...
Jessie A. Posar   +8 more
wiley   +1 more source

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

open access: yesAdvanced Electronic Materials, 2018
Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang   +5 more
doaj   +1 more source

Organic Electrochemical Transistor Channel Materials: Copolymerization Versus Physical Mixing of Glycolated and Alkoxylated Polymers

open access: yesAdvanced Functional Materials, EarlyView.
This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens   +14 more
wiley   +1 more source

Electrical switching properties of Ag2S/Cu3P under light and heat excitation

open access: yesHeliyon
In this paper, we prepared and investigated the electrical switching behaviors of Cu3P/Ag2S heterojunction in the absence/presence of light/heat excitation. The structure exhibited bipolar memristor characteristics.
Xin Guo   +5 more
doaj   +1 more source

Integration of external electric fields in molecular dynamics simulation models for resistive switching devices

open access: yes, 2018
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their functionality are
Dirkmann, Sven   +2 more
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

NanoMOF‐Based Multilevel Anti‐Counterfeiting by a Combination of Visible and Invisible Photoluminescence and Conductivity

open access: yesAdvanced Functional Materials, EarlyView.
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner   +9 more
wiley   +1 more source

Field-Induced Resistive Switching in Metal-Oxide Interfaces

open access: yes, 2004
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal ...
Baikalov, A.   +8 more
core   +2 more sources

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