Results 191 to 200 of about 1,933,006 (329)

Ultrahigh‐Yield, Multifunctional, and High‐Performance Organic Memory for Seamless In‐Sensor Computing Operation

Advanced Functional Materials, EarlyView.
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim, Jaehyoung Ko, Namju Kim, Quynh H. Nguyen, Hoyeon Lee, Joohwan Eo, Seongeon Jin, Ji Eon Kwon, Seung‐Yeol Jeon, Youngdo Jeong, Dongseok Kwon, Sung Gap Im, Sanghan Lee, Byung Chul Jang, Yongho Joo   +14 more
wiley   +1 more source

Filamentary Resistive Switching Mechanism in CuO Thin Film-Based Memristor. [PDF]

Materials (Basel)
Ozga M, Mroczynski R, Matus K, Arabasz S, Witkowski BS.   +4 more
europepmc   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Resistive Switching Behavior of Sol-Gel-Processed ZnMgO/ZnO Bilayer in Optoelectronic Devices. [PDF]

Nanomaterials (Basel)
Shin HS, Kim DH, Lee D, Kim J.
europepmc   +1 more source

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

Advanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere, Yong Beom Kim, Colin Gilgenbach, James M. LeBeau, WooChul Jung, Harry L. Tuller   +5 more
wiley   +1 more source

Hysteresis in Perovskite Devices: Understanding the Abrupt Resistive Switching Mechanism. [PDF]

ACS Energy Lett
Alvarez AO, de Boer JJ, Sonneveld L, Bleiji Y, Alarcón-Lladó E, Ehrler B.   +5 more
europepmc   +1 more source

High‐Yield Synthesis of Fe‐NC Electrocatalysts Using Mg2+ Templating and Schiff‐Base Porous Organic Polymers

Advanced Functional Materials, EarlyView.
Fe─NC porous oxygen reduction electrocatalysts are prepared employing a 2,4,6‐Triaminopyrimidine‐based porous organic polymer, a Mg2+ Lewis acid, and a low‐temperature cation exchange protocol. Using the polymer precursor achieves high pyrolysis yields and results in atomically dispersed FeNx sites. The resulting catalysts feature hierarchical porosity
Eliot Petitdemange, Jinjie Zhu, Angus Pedersen, Joseph Parker, S. Esmael Balaghi, Shaohua Li, Silvia Favero, José Ignacio Martínez, Sarah Haigh, Maria‐Magdalena Titirici, Anna Fischer, Jesús Barrio   +11 more
wiley   +1 more source

Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]

ACS Omega
Fedotov MI, Klyukina EV, Vankaev AS, Znamenskii AG, Koveshnikov SV.   +4 more
europepmc   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

Advanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek, Seong Chul Hong, Jinwoo Kim, Hyeongseok Lee, Hyun Woo Jeong, Kenji Watanabe, Takashi Taniguchi, Min Hyuk Park, Gwan‐Hyoung Lee   +8 more
wiley   +1 more source

Analog Resistive Switching Phenomena in Titanium Oxide Thin-Film Memristive Devices. [PDF]

Materials (Basel)
Islam K, Sultana R, Mroczyński R.
europepmc   +1 more source