2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Mott resistive switching initiated by topological defects. [PDF]
Milloch A +13 more
europepmc +1 more source
Engineering Silver Nanowire Networks: From Transparent Electrodes to Resistive Switching Devices
Haiwei Du +7 more
openalex +2 more sources
This study presents a dynamic interaction between liquid resins and photopolymerized structures enabled by an in situ light‐writing setup. By controlling a three‐phase interface through localized photopolymerization, which provides physical confinement for the remaining uncured resin regions, the approach establishes a programmable pathway that ...
Kibeom Kim +3 more
wiley +1 more source
Threshold Resistive Switching in Inorganic Lead-Free Cesium-Bismuth Iodide Perovskite for Neuron Emulation. [PDF]
Loizos M +4 more
europepmc +1 more source
Drug‐Free Thrombolysis Mediated by Physically Activated Micro/Nanoparticles
Overview of particle‐mediated thrombolytic effects (thermal, mechanical, and chemical) and their activating physical stimuli (light, ultrasound, and magnetic field) in drug‐free thrombolysis. ABSTRACT Thrombus‐associated disorders rank among the world's leading causes of death, with ischemic heart disease and stroke as the main contributors.
Pierre Sarfati +2 more
wiley +1 more source
The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Jeżak P +3 more
europepmc +1 more source
Bipolar resistive switching memory with bismuth sulfide quantum dots
Ritu Rohilla +5 more
openalex +1 more source
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun +7 more
wiley +1 more source
Coexistence of WORM and RRAM Resistive Switching in Coumarin Derivatives: A Comprehensive Performance Analysis. [PDF]
Deb R +6 more
europepmc +1 more source

