Results 211 to 220 of about 8,899 (300)

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator. [PDF]

Sci Rep, 2017
Li Y, Zhang M, Long S, Teng J, Liu Q, Lv H, Miranda E, Suñé J, Liu M.   +8 more
europepmc   +1 more source

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Seedless One‐Pot Synthesis of Colloidal InAs Quantum Dots Enabling a High‐Accuracy Photoplethysmography Oximeter

Advanced Science, EarlyView.
A real‐time, non‐contact photoplethysmography (PPG) system based on InAs colloidal quantum dots (CQDs) synthesized via a seedless injection synthesis is demonstrated. The measured oxygen saturation shows considerable agreement with commercial PPG devices.
Beom Kwan Kim, Seungin Jee, Yongnam Ahn, In‐Suh Lee, Dongeon Kim, Seongchong Park, Yujin Jung, In‐Ho Bae, Se‐Woong Baek   +8 more
wiley   +1 more source

Molecular Design Toward High-Performance Solution-Processable Push-Pull Zinc(II) Porphyrin-Based Resistive Memory Devices: From Binary to Ternary Memory Behavior. [PDF]

Small Sci
Kwong KW, Chan H, Leung MY, Hong EY, Lai SL, Yam VW.   +5 more
europepmc   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Tuning TiO₂ Memristors by Defect Engineering: From Short-Term Memory to Recoverable Long-Term Resistance States. [PDF]

ACS Appl Mater Interfaces
Kaur R, Tran TT, Lindblad R, Zhang Z, Primetzhofer D, Ström P.   +5 more
europepmc   +1 more source

Point contact resistive switching memory based on self-formed interface of Al/ITO. [PDF]

Sci Rep, 2016
Li Q, Qiu L, Wei X, Dai B, Zeng H.
europepmc   +1 more source

Harnessing Phase Separation for the Development of High‐Performance Hydrogels

Advanced Science, EarlyView.
ABSTRACT Hydrogels are indispensable for the development of next‐generation bioelectronics, soft robotics, and biomedical devices, where their mechanical properties determine performance and reliability. Among strategies to enhance hydrogel mechanics, phase separation enables controlled heterogeneity resulting in gel networks that are reinforced by ...
Yue Shao, Yiming Ma, Baihao Shao, Molly M. Stevens   +3 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source