Results 21 to 30 of about 3,724 (156)

Half-Spectrum Suppression in Dynamic Resonant Tunneling

open access: yesApplied Sciences, 2023
It is well known that in a process of Dynamic Resonant Tunneling, where the energy level of the quasi-bound state varies in time, the tunneling current can be drastically suppressed at specific energies.
Gilad Zangwill, Er’el Granot
doaj   +1 more source

Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}

open access: yesPhysical Review Research, 2023
Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement.
Kei Kinoshita   +8 more
doaj   +1 more source

Multiple Fano Resonances in Dynamic Resonant Tunneling Processes

open access: yesApplied Sciences, 2023
The existence of Fano resonances in dynamic resonant tunneling (RT) systems has been investigated. Fano resonances are characterized by the appearance of a 100% reflection coefficient in proximity to a high transmission coefficient.
Gilad Zangwill, Er’el Granot
doaj   +1 more source

Photo-plasmonic effect as the hot electron generation mechanism

open access: yesScientific Reports, 2023
Based on the effective Schrödinger–Poisson model a new physical mechanism for resonant hot-electron generation at irradiated half-space metal–vacuum interface of electron gas with arbitrary degree of degeneracy is proposed.
M. Akbari-Moghanjoughi
doaj   +1 more source

Superconducting junction with resonant tunneling [PDF]

open access: yesIEEE Transactions on Magnetics, 1985
In oxide coating metals, localized states exist, which strongly hybridize with conduction electrons forming interface states (IS). This hybridization yields several qualitative and Quantitative new effects typical for oxide coated metals. The Hamiltonians for these new effects describe the: - enhanced coupling of IS to phonons, - strengthened and ...
Kresin, V., Halbritter, J.
openaire   +2 more sources

The dependence of resonant tunneling transmission coefficient on well width and barriers number of GaN/Al0.3Ga0.7N nanostructured system

open access: yesIraqi Journal of Physics, 2019
A numerical computation for determination transmission coefficient and resonant tunneling energies of multibarriers heterostructure has been investigated.
Moafak Cadim Abdulrida
doaj   +1 more source

Renormalization of Resonant Tunneling in MOSFETs [PDF]

open access: yesJournal of Computational and Theoretical Nanoscience, 2007
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons.
Mozyrsky, D.   +3 more
openaire   +2 more sources

Enhanced current injection from a quantum well to a quantum dash in magnetic field

open access: yesNew Journal of Physics, 2014
Resonant tunneling injection is a key ingredient in achieving population inversion in a putative quantum dot cascade laser. In a quantum dot based structure, such resonant current requires a matching of the wavefunction shape in k -space between the ...
Gian L Paravicini-Bagliani   +5 more
doaj   +1 more source

Resonant tunneling in a dissipative environment [PDF]

open access: yesPhysical Review B, 2009
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the tunneling rate. In the regime of sequential tunneling, the height of the single-electron conductance peaks increases
Bomze, Yu.   +4 more
openaire   +2 more sources

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]

open access: yesJournal of Nanostructures, 2012
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
doaj   +1 more source

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