Results 21 to 30 of about 3,724 (156)
Half-Spectrum Suppression in Dynamic Resonant Tunneling
It is well known that in a process of Dynamic Resonant Tunneling, where the energy level of the quasi-bound state varies in time, the tunneling current can be drastically suppressed at specific energies.
Gilad Zangwill, Er’el Granot
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Polarity-dependent twist-controlled resonant tunneling device based on few-layer WSe_{2}
Few-layer (FL) transition metal dichalcogenides have been found to exhibit discrete subbands, called van der Waals quantum well (vdWQW) states, resulting from out-of-plane quantum confinement.
Kei Kinoshita +8 more
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Multiple Fano Resonances in Dynamic Resonant Tunneling Processes
The existence of Fano resonances in dynamic resonant tunneling (RT) systems has been investigated. Fano resonances are characterized by the appearance of a 100% reflection coefficient in proximity to a high transmission coefficient.
Gilad Zangwill, Er’el Granot
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Photo-plasmonic effect as the hot electron generation mechanism
Based on the effective Schrödinger–Poisson model a new physical mechanism for resonant hot-electron generation at irradiated half-space metal–vacuum interface of electron gas with arbitrary degree of degeneracy is proposed.
M. Akbari-Moghanjoughi
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Superconducting junction with resonant tunneling [PDF]
In oxide coating metals, localized states exist, which strongly hybridize with conduction electrons forming interface states (IS). This hybridization yields several qualitative and Quantitative new effects typical for oxide coated metals. The Hamiltonians for these new effects describe the: - enhanced coupling of IS to phonons, - strengthened and ...
Kresin, V., Halbritter, J.
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A numerical computation for determination transmission coefficient and resonant tunneling energies of multibarriers heterostructure has been investigated.
Moafak Cadim Abdulrida
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Renormalization of Resonant Tunneling in MOSFETs [PDF]
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons.
Mozyrsky, D. +3 more
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Enhanced current injection from a quantum well to a quantum dash in magnetic field
Resonant tunneling injection is a key ingredient in achieving population inversion in a putative quantum dot cascade laser. In a quantum dot based structure, such resonant current requires a matching of the wavefunction shape in k -space between the ...
Gian L Paravicini-Bagliani +5 more
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Resonant tunneling in a dissipative environment [PDF]
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the tunneling rate. In the regime of sequential tunneling, the height of the single-electron conductance peaks increases
Bomze, Yu. +4 more
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Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
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